Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

Publikation: Bidrag til tidsskriftReviewfagfællebedømt

Standard

Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon. / Hertel, A.; Andersen, L. O.; van Zanten, D. M. T.; Eichinger, M.; Scarlino, P.; Yadav, S.; Karthik, J.; Gronin, S.; Gardner, G. C.; Manfra, M. J.; Marcus, C. M.; Petersson, K. D.

I: Physical Review Applied, Bind 16, Nr. 4, 044015, 12.10.2021.

Publikation: Bidrag til tidsskriftReviewfagfællebedømt

Harvard

Hertel, A, Andersen, LO, van Zanten, DMT, Eichinger, M, Scarlino, P, Yadav, S, Karthik, J, Gronin, S, Gardner, GC, Manfra, MJ, Marcus, CM & Petersson, KD 2021, 'Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon', Physical Review Applied, bind 16, nr. 4, 044015. https://doi.org/10.1103/PhysRevApplied.16.044015

APA

Hertel, A., Andersen, L. O., van Zanten, D. M. T., Eichinger, M., Scarlino, P., Yadav, S., Karthik, J., Gronin, S., Gardner, G. C., Manfra, M. J., Marcus, C. M., & Petersson, K. D. (2021). Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon. Physical Review Applied, 16(4), [044015]. https://doi.org/10.1103/PhysRevApplied.16.044015

Vancouver

Hertel A, Andersen LO, van Zanten DMT, Eichinger M, Scarlino P, Yadav S o.a. Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon. Physical Review Applied. 2021 okt. 12;16(4). 044015. https://doi.org/10.1103/PhysRevApplied.16.044015

Author

Hertel, A. ; Andersen, L. O. ; van Zanten, D. M. T. ; Eichinger, M. ; Scarlino, P. ; Yadav, S. ; Karthik, J. ; Gronin, S. ; Gardner, G. C. ; Manfra, M. J. ; Marcus, C. M. ; Petersson, K. D. / Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon. I: Physical Review Applied. 2021 ; Bind 16, Nr. 4.

Bibtex

@article{e2c9a62b285b4f218ccc2a4d787390ee,
title = "Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon",
abstract = "We present a superconductor-semiconductor materials system that is both scalable and monolithically integrated on a silicon substrate. It uses selective-area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high-resistivity silicon substrate. We characterize the electrical properties of this materials system at millikelvin temperatures and observe a high average field-effect mobility of mu 3200 cm2/Vs for the InAs channel and a hard induced superconducting gap. Josephson junctions exhibit a high interface transmission, T 0.75, a gate-voltage-tunable switching current with a product of critical current and normal state resistance, ICRN 83 mu V, and signatures of multiple Andreev reflections. These results pave the way for scalable and high-coherence gate-voltage-tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.",
keywords = "ENERGY-GAP STRUCTURE, QUANTUM, SUPERCURRENT, JOSEPHSON, EPITAXY",
author = "A. Hertel and Andersen, {L. O.} and {van Zanten}, {D. M. T.} and M. Eichinger and P. Scarlino and S. Yadav and J. Karthik and S. Gronin and Gardner, {G. C.} and Manfra, {M. J.} and Marcus, {C. M.} and Petersson, {K. D.}",
year = "2021",
month = oct,
day = "12",
doi = "10.1103/PhysRevApplied.16.044015",
language = "English",
volume = "16",
journal = "Physical Review Applied",
issn = "2331-7019",
publisher = "American Physical Society",
number = "4",

}

RIS

TY - JOUR

T1 - Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon

AU - Hertel, A.

AU - Andersen, L. O.

AU - van Zanten, D. M. T.

AU - Eichinger, M.

AU - Scarlino, P.

AU - Yadav, S.

AU - Karthik, J.

AU - Gronin, S.

AU - Gardner, G. C.

AU - Manfra, M. J.

AU - Marcus, C. M.

AU - Petersson, K. D.

PY - 2021/10/12

Y1 - 2021/10/12

N2 - We present a superconductor-semiconductor materials system that is both scalable and monolithically integrated on a silicon substrate. It uses selective-area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high-resistivity silicon substrate. We characterize the electrical properties of this materials system at millikelvin temperatures and observe a high average field-effect mobility of mu 3200 cm2/Vs for the InAs channel and a hard induced superconducting gap. Josephson junctions exhibit a high interface transmission, T 0.75, a gate-voltage-tunable switching current with a product of critical current and normal state resistance, ICRN 83 mu V, and signatures of multiple Andreev reflections. These results pave the way for scalable and high-coherence gate-voltage-tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.

AB - We present a superconductor-semiconductor materials system that is both scalable and monolithically integrated on a silicon substrate. It uses selective-area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high-resistivity silicon substrate. We characterize the electrical properties of this materials system at millikelvin temperatures and observe a high average field-effect mobility of mu 3200 cm2/Vs for the InAs channel and a hard induced superconducting gap. Josephson junctions exhibit a high interface transmission, T 0.75, a gate-voltage-tunable switching current with a product of critical current and normal state resistance, ICRN 83 mu V, and signatures of multiple Andreev reflections. These results pave the way for scalable and high-coherence gate-voltage-tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.

KW - ENERGY-GAP STRUCTURE

KW - QUANTUM

KW - SUPERCURRENT

KW - JOSEPHSON

KW - EPITAXY

U2 - 10.1103/PhysRevApplied.16.044015

DO - 10.1103/PhysRevApplied.16.044015

M3 - Review

VL - 16

JO - Physical Review Applied

JF - Physical Review Applied

SN - 2331-7019

IS - 4

M1 - 044015

ER -

ID: 282470780