Highly Transparent Gatable Superconducting Shadow Junctions

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Highly Transparent Gatable Superconducting Shadow Junctions. / Khan, Sabbir A.; Lampadaris, Charalampos; Cui, Ajuan; Stampfer, Lukas; Liu, Yu; Pauka, Sebastian J.; Cachaza, Martin E.; Fiordaliso, Elisabetta M.; Kang, Jung-Hyun; Korneychuk, Svetlana; Mutas, Timo; Sestoft, Joachim E.; Krizek, Filip; Tanta, Rawa; Cassidy, Maja C.; Jespersen, Thomas S.; Krogstrup, Peter.

I: ACS Nano, Bind 14, Nr. 11, 24.11.2020, s. 14605-14615.

Publikation: Bidrag til tidsskriftTidsskriftartikelfagfællebedømt

Harvard

Khan, SA, Lampadaris, C, Cui, A, Stampfer, L, Liu, Y, Pauka, SJ, Cachaza, ME, Fiordaliso, EM, Kang, J-H, Korneychuk, S, Mutas, T, Sestoft, JE, Krizek, F, Tanta, R, Cassidy, MC, Jespersen, TS & Krogstrup, P 2020, 'Highly Transparent Gatable Superconducting Shadow Junctions', ACS Nano, bind 14, nr. 11, s. 14605-14615. https://doi.org/10.1021/acsnano.0c02979

APA

Khan, S. A., Lampadaris, C., Cui, A., Stampfer, L., Liu, Y., Pauka, S. J., Cachaza, M. E., Fiordaliso, E. M., Kang, J-H., Korneychuk, S., Mutas, T., Sestoft, J. E., Krizek, F., Tanta, R., Cassidy, M. C., Jespersen, T. S., & Krogstrup, P. (2020). Highly Transparent Gatable Superconducting Shadow Junctions. ACS Nano, 14(11), 14605-14615. https://doi.org/10.1021/acsnano.0c02979

Vancouver

Khan SA, Lampadaris C, Cui A, Stampfer L, Liu Y, Pauka SJ o.a. Highly Transparent Gatable Superconducting Shadow Junctions. ACS Nano. 2020 nov. 24;14(11):14605-14615. https://doi.org/10.1021/acsnano.0c02979

Author

Khan, Sabbir A. ; Lampadaris, Charalampos ; Cui, Ajuan ; Stampfer, Lukas ; Liu, Yu ; Pauka, Sebastian J. ; Cachaza, Martin E. ; Fiordaliso, Elisabetta M. ; Kang, Jung-Hyun ; Korneychuk, Svetlana ; Mutas, Timo ; Sestoft, Joachim E. ; Krizek, Filip ; Tanta, Rawa ; Cassidy, Maja C. ; Jespersen, Thomas S. ; Krogstrup, Peter. / Highly Transparent Gatable Superconducting Shadow Junctions. I: ACS Nano. 2020 ; Bind 14, Nr. 11. s. 14605-14615.

Bibtex

@article{d04cbf15d89e4248a57eb9249937a85b,
title = "Highly Transparent Gatable Superconducting Shadow Junctions",
abstract = "Gate-tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single-crystalline InAs, InSb, and InAs1-xSbx semiconductor nanowires with epitaxial Al, Sn, and Pb superconductors and in situ shadowed junctions in a single-step molecular beam epitaxy process. We investigate correlations between fabrication parameters, junction morphologies, and electronic transport properties of the junctions and show that the examined in situ shadowed junctions are of significantly higher quality than the etched junctions. By varying the edge sharpness of the shadow junctions, we show that the sharpest edges yield the highest junction transparency for all three examined semiconductors. Further, critical supercurrent measurements reveal an extraordinarily high ICRN, close to the KO-2 limit. This study demonstrates a promising engineering path toward reliable gate-tunable superconducting qubits.",
keywords = "semiconductor-superconductor nanowires, shadow junctions, ballistic transport, quantum computing, Majorana bound states, topological materials",
author = "Khan, {Sabbir A.} and Charalampos Lampadaris and Ajuan Cui and Lukas Stampfer and Yu Liu and Pauka, {Sebastian J.} and Cachaza, {Martin E.} and Fiordaliso, {Elisabetta M.} and Jung-Hyun Kang and Svetlana Korneychuk and Timo Mutas and Sestoft, {Joachim E.} and Filip Krizek and Rawa Tanta and Cassidy, {Maja C.} and Jespersen, {Thomas S.} and Peter Krogstrup",
year = "2020",
month = nov,
day = "24",
doi = "10.1021/acsnano.0c02979",
language = "English",
volume = "14",
pages = "14605--14615",
journal = "A C S Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "11",

}

RIS

TY - JOUR

T1 - Highly Transparent Gatable Superconducting Shadow Junctions

AU - Khan, Sabbir A.

AU - Lampadaris, Charalampos

AU - Cui, Ajuan

AU - Stampfer, Lukas

AU - Liu, Yu

AU - Pauka, Sebastian J.

AU - Cachaza, Martin E.

AU - Fiordaliso, Elisabetta M.

AU - Kang, Jung-Hyun

AU - Korneychuk, Svetlana

AU - Mutas, Timo

AU - Sestoft, Joachim E.

AU - Krizek, Filip

AU - Tanta, Rawa

AU - Cassidy, Maja C.

AU - Jespersen, Thomas S.

AU - Krogstrup, Peter

PY - 2020/11/24

Y1 - 2020/11/24

N2 - Gate-tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single-crystalline InAs, InSb, and InAs1-xSbx semiconductor nanowires with epitaxial Al, Sn, and Pb superconductors and in situ shadowed junctions in a single-step molecular beam epitaxy process. We investigate correlations between fabrication parameters, junction morphologies, and electronic transport properties of the junctions and show that the examined in situ shadowed junctions are of significantly higher quality than the etched junctions. By varying the edge sharpness of the shadow junctions, we show that the sharpest edges yield the highest junction transparency for all three examined semiconductors. Further, critical supercurrent measurements reveal an extraordinarily high ICRN, close to the KO-2 limit. This study demonstrates a promising engineering path toward reliable gate-tunable superconducting qubits.

AB - Gate-tunable junctions are key elements in quantum devices based on hybrid semiconductor-superconductor materials. They serve multiple purposes ranging from tunnel spectroscopy probes to voltage-controlled qubit operations in gatemon and topological qubits. Common to all is that junction transparency plays a critical role. In this study, we grow single-crystalline InAs, InSb, and InAs1-xSbx semiconductor nanowires with epitaxial Al, Sn, and Pb superconductors and in situ shadowed junctions in a single-step molecular beam epitaxy process. We investigate correlations between fabrication parameters, junction morphologies, and electronic transport properties of the junctions and show that the examined in situ shadowed junctions are of significantly higher quality than the etched junctions. By varying the edge sharpness of the shadow junctions, we show that the sharpest edges yield the highest junction transparency for all three examined semiconductors. Further, critical supercurrent measurements reveal an extraordinarily high ICRN, close to the KO-2 limit. This study demonstrates a promising engineering path toward reliable gate-tunable superconducting qubits.

KW - semiconductor-superconductor nanowires

KW - shadow junctions

KW - ballistic transport

KW - quantum computing

KW - Majorana bound states

KW - topological materials

U2 - 10.1021/acsnano.0c02979

DO - 10.1021/acsnano.0c02979

M3 - Journal article

C2 - 32396328

VL - 14

SP - 14605

EP - 14615

JO - A C S Nano

JF - A C S Nano

SN - 1936-0851

IS - 11

ER -

ID: 256168001