Wafer-scale epitaxial modulation of quantum dot density

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Wafer-scale epitaxial modulation of quantum dot density. / Bart, N.; Dangel, C.; Zajac, P.; Spitzer, N.; Ritzmann, J.; Schmidt, M.; Babin, H. G.; Schott, R.; Valentin, S. R.; Scholz, S.; Wang, Y.; Uppu, R.; Najer, D.; Loebl, M. C.; Tomm, N.; Javadi, A.; Antoniadis, N. O.; Midolo, L.; Mueller, K.; Warburton, R. J.; Lodahl, P.; Wieck, A. D.; Finley, J. J.; Ludwig, A.

I: Nature Communications, Bind 13, Nr. 1, 1633, 28.03.2022.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › fagfællebedømt

Harvard

Bart, N, Dangel, C, Zajac, P, Spitzer, N, Ritzmann, J, Schmidt, M, Babin, HG, Schott, R, Valentin, SR, Scholz, S, Wang, Y, Uppu, R, Najer, D, Loebl, MC, Tomm, N, Javadi, A, Antoniadis, NO, Midolo, L, Mueller, K, Warburton, RJ, Lodahl, P, Wieck, AD, Finley, JJ & Ludwig, A 2022, 'Wafer-scale epitaxial modulation of quantum dot density', Nature Communications, bind 13, nr. 1, 1633. https://doi.org/10.1038/s41467-022-29116-8

APA

Bart, N., Dangel, C., Zajac, P., Spitzer, N., Ritzmann, J., Schmidt, M., Babin, H. G., Schott, R., Valentin, S. R., Scholz, S., Wang, Y., Uppu, R., Najer, D., Loebl, M. C., Tomm, N., Javadi, A., Antoniadis, N. O., Midolo, L., Mueller, K., ... Ludwig, A. (2022). Wafer-scale epitaxial modulation of quantum dot density. Nature Communications, 13(1), [1633]. https://doi.org/10.1038/s41467-022-29116-8

Vancouver

Bart N, Dangel C, Zajac P, Spitzer N, Ritzmann J, Schmidt M o.a. Wafer-scale epitaxial modulation of quantum dot density. Nature Communications. 2022 mar. 28;13(1). 1633. https://doi.org/10.1038/s41467-022-29116-8

Author

Bart, N. ; Dangel, C. ; Zajac, P. ; Spitzer, N. ; Ritzmann, J. ; Schmidt, M. ; Babin, H. G. ; Schott, R. ; Valentin, S. R. ; Scholz, S. ; Wang, Y. ; Uppu, R. ; Najer, D. ; Loebl, M. C. ; Tomm, N. ; Javadi, A. ; Antoniadis, N. O. ; Midolo, L. ; Mueller, K. ; Warburton, R. J. ; Lodahl, P. ; Wieck, A. D. ; Finley, J. J. ; Ludwig, A. / Wafer-scale epitaxial modulation of quantum dot density. I: Nature Communications. 2022 ; Bind 13, Nr. 1.

Bibtex

@article{3283e5bc0ef64675ba44c7bf184cef31,
title = "Wafer-scale epitaxial modulation of quantum dot density",
abstract = "Nucleation control of self-assembled quantum dots is challenging. Here, the authors employ conventional molecular beam epitaxy to achieve wafer-scale density modulation of high-quality quantum dots with tunable periodicity on unpatterned substrates.Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-densities for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/mu m(2) and periods ranging from several millimeters down to at least a few hundred microns. This method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer.",
keywords = "SELF-ORGANIZED GROWTH, SURFACE, UNIFORMITY, ISLANDS, CHARGE, GAAS",
author = "N. Bart and C. Dangel and P. Zajac and N. Spitzer and J. Ritzmann and M. Schmidt and Babin, {H. G.} and R. Schott and Valentin, {S. R.} and S. Scholz and Y. Wang and R. Uppu and D. Najer and Loebl, {M. C.} and N. Tomm and A. Javadi and Antoniadis, {N. O.} and L. Midolo and K. Mueller and Warburton, {R. J.} and P. Lodahl and Wieck, {A. D.} and Finley, {J. J.} and A. Ludwig",
year = "2022",
month = mar,
day = "28",
doi = "10.1038/s41467-022-29116-8",
language = "English",
volume = "13",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "nature publishing group",
number = "1",

}

RIS

TY - JOUR

T1 - Wafer-scale epitaxial modulation of quantum dot density

AU - Bart, N.

AU - Dangel, C.

AU - Zajac, P.

AU - Spitzer, N.

AU - Ritzmann, J.

AU - Schmidt, M.

AU - Babin, H. G.

AU - Schott, R.

AU - Valentin, S. R.

AU - Scholz, S.

AU - Wang, Y.

AU - Uppu, R.

AU - Najer, D.

AU - Loebl, M. C.

AU - Tomm, N.

AU - Javadi, A.

AU - Antoniadis, N. O.

AU - Midolo, L.

AU - Mueller, K.

AU - Warburton, R. J.

AU - Lodahl, P.

AU - Wieck, A. D.

AU - Finley, J. J.

AU - Ludwig, A.

PY - 2022/3/28

Y1 - 2022/3/28

N2 - Nucleation control of self-assembled quantum dots is challenging. Here, the authors employ conventional molecular beam epitaxy to achieve wafer-scale density modulation of high-quality quantum dots with tunable periodicity on unpatterned substrates.Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-densities for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/mu m(2) and periods ranging from several millimeters down to at least a few hundred microns. This method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer.

AB - Nucleation control of self-assembled quantum dots is challenging. Here, the authors employ conventional molecular beam epitaxy to achieve wafer-scale density modulation of high-quality quantum dots with tunable periodicity on unpatterned substrates.Precise control of the properties of semiconductor quantum dots (QDs) is vital for creating novel devices for quantum photonics and advanced opto-electronics. Suitable low QD-densities for single QD devices and experiments are challenging to control during epitaxy and are typically found only in limited regions of the wafer. Here, we demonstrate how conventional molecular beam epitaxy (MBE) can be used to modulate the density of optically active QDs in one- and two- dimensional patterns, while still retaining excellent quality. We find that material thickness gradients during layer-by-layer growth result in surface roughness modulations across the whole wafer. Growth on such templates strongly influences the QD nucleation probability. We obtain density modulations between 1 and 10 QDs/mu m(2) and periods ranging from several millimeters down to at least a few hundred microns. This method is universal and expected to be applicable to a wide variety of different semiconductor material systems. We apply the method to enable growth of ultra-low noise QDs across an entire 3-inch semiconductor wafer.

KW - SELF-ORGANIZED GROWTH

KW - SURFACE

KW - UNIFORMITY

KW - ISLANDS

KW - CHARGE

KW - GAAS

U2 - 10.1038/s41467-022-29116-8

DO - 10.1038/s41467-022-29116-8

M3 - Journal article

C2 - 35347120

VL - 13

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

IS - 1

M1 - 1633

ER -

ID: 303444177