Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires

Research output: Contribution to journalJournal articlepeer-review

Standard

Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires. / Stampfer, Lukas; Carrad, Damon J.; Olsteins, Dags; Petersen, Christian Emanuel N.; Khan, Sabbir A.; Krogstrup, Peter; Jespersen, Thomas S.

In: Advanced Materials, Vol. 34, No. 11, 2108878, 17.03.2022.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Stampfer, L, Carrad, DJ, Olsteins, D, Petersen, CEN, Khan, SA, Krogstrup, P & Jespersen, TS 2022, 'Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires', Advanced Materials, vol. 34, no. 11, 2108878. https://doi.org/10.1002/adma.202108878

APA

Stampfer, L., Carrad, D. J., Olsteins, D., Petersen, C. E. N., Khan, S. A., Krogstrup, P., & Jespersen, T. S. (2022). Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires. Advanced Materials, 34(11), [2108878]. https://doi.org/10.1002/adma.202108878

Vancouver

Stampfer L, Carrad DJ, Olsteins D, Petersen CEN, Khan SA, Krogstrup P et al. Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires. Advanced Materials. 2022 Mar 17;34(11). 2108878. https://doi.org/10.1002/adma.202108878

Author

Stampfer, Lukas ; Carrad, Damon J. ; Olsteins, Dags ; Petersen, Christian Emanuel N. ; Khan, Sabbir A. ; Krogstrup, Peter ; Jespersen, Thomas S. / Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires. In: Advanced Materials. 2022 ; Vol. 34, No. 11.

Bibtex

@article{92aba1b0f2a8413ca4bed24ce48b6bbf,
title = "Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires",
abstract = "Understanding the spatial distribution of charge carriers in III–V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of half-shell InAsSb/Al nanowires is studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibit periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution is tunable by a gate potential as expected from electrostatic models.",
keywords = "hybrid superconductivity, quantum interference, quantum transport, semiconductor nanowires, surface accumulation",
author = "Lukas Stampfer and Carrad, {Damon J.} and Dags Olsteins and Petersen, {Christian Emanuel N.} and Khan, {Sabbir A.} and Peter Krogstrup and Jespersen, {Thomas S.}",
note = "Publisher Copyright: {\textcopyright} 2022 Wiley-VCH GmbH",
year = "2022",
month = mar,
day = "17",
doi = "10.1002/adma.202108878",
language = "English",
volume = "34",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley - V C H Verlag GmbH & Co. KGaA",
number = "11",

}

RIS

TY - JOUR

T1 - Andreev Interference in the Surface Accumulation Layer of Half-Shell InAsSb/Al Hybrid Nanowires

AU - Stampfer, Lukas

AU - Carrad, Damon J.

AU - Olsteins, Dags

AU - Petersen, Christian Emanuel N.

AU - Khan, Sabbir A.

AU - Krogstrup, Peter

AU - Jespersen, Thomas S.

N1 - Publisher Copyright: © 2022 Wiley-VCH GmbH

PY - 2022/3/17

Y1 - 2022/3/17

N2 - Understanding the spatial distribution of charge carriers in III–V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of half-shell InAsSb/Al nanowires is studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibit periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution is tunable by a gate potential as expected from electrostatic models.

AB - Understanding the spatial distribution of charge carriers in III–V nanowires proximity coupled to superconductors is important for the design and interpretation of experiments based on hybrid quantum devices. In this letter, the gate-dependent surface accumulation layer of half-shell InAsSb/Al nanowires is studied by means of Andreev interference in a parallel magnetic field. Both uniform hybrid nanowires and devices featuring a short Josephson junction fabricated by shadow lithography, exhibit periodic modulation of the switching current. The period corresponds to a flux quantum through the nanowire diameter and is consistent with Andreev bound states occupying a cylindrical surface accumulation layer. The spatial distribution is tunable by a gate potential as expected from electrostatic models.

KW - hybrid superconductivity

KW - quantum interference

KW - quantum transport

KW - semiconductor nanowires

KW - surface accumulation

U2 - 10.1002/adma.202108878

DO - 10.1002/adma.202108878

M3 - Journal article

C2 - 35050545

AN - SCOPUS:85124462938

VL - 34

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 11

M1 - 2108878

ER -

ID: 307335424