Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

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Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions. / Bolotin, Kirill; Kuemmeth, Ferdinand; Ralph, D.

In: Physical Review Letters, Vol. 97, No. 12, 01.01.2006, p. 127202.

Research output: Contribution to journalJournal articleResearchpeer-review

Harvard

Bolotin, K, Kuemmeth, F & Ralph, D 2006, 'Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions', Physical Review Letters, vol. 97, no. 12, pp. 127202. https://doi.org/10.1103/PhysRevLett.97.127202

APA

Bolotin, K., Kuemmeth, F., & Ralph, D. (2006). Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions. Physical Review Letters, 97(12), 127202. https://doi.org/10.1103/PhysRevLett.97.127202

Vancouver

Bolotin K, Kuemmeth F, Ralph D. Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions. Physical Review Letters. 2006 Jan 1;97(12):127202. https://doi.org/10.1103/PhysRevLett.97.127202

Author

Bolotin, Kirill ; Kuemmeth, Ferdinand ; Ralph, D. / Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions. In: Physical Review Letters. 2006 ; Vol. 97, No. 12. pp. 127202.

Bibtex

@article{567ac131c76840708e932a1c8b7b9c61,
title = "Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions",
abstract = "We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.",
author = "Kirill Bolotin and Ferdinand Kuemmeth and D Ralph",
year = "2006",
month = jan,
day = "1",
doi = "10.1103/PhysRevLett.97.127202",
language = "English",
volume = "97",
pages = "127202",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "12",

}

RIS

TY - JOUR

T1 - Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions

AU - Bolotin, Kirill

AU - Kuemmeth, Ferdinand

AU - Ralph, D

PY - 2006/1/1

Y1 - 2006/1/1

N2 - We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.

AB - We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.

U2 - 10.1103/PhysRevLett.97.127202

DO - 10.1103/PhysRevLett.97.127202

M3 - Journal article

C2 - 17025993

VL - 97

SP - 127202

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 12

ER -

ID: 44225527