Atomic-Scale Characterization of Planar Selective-Area-Grown InAs/ InGaAs Nanowires
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Atomic-Scale Characterization of Planar Selective-Area-Grown InAs/ InGaAs Nanowires. / Qu, Jiangtao; Beznasyuk, Daria; Cassidy, Maja; Tanta, Rawa; Yang, Limei; Holmes, Natalie P.; Griffith, Matthew J.; Krogstrup, Peter; Cairney, Julie M.
In: ACS applied materials & interfaces, Vol. 14, 12.10.2022, p. 47981-47990.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - Atomic-Scale Characterization of Planar Selective-Area-Grown InAs/ InGaAs Nanowires
AU - Qu, Jiangtao
AU - Beznasyuk, Daria
AU - Cassidy, Maja
AU - Tanta, Rawa
AU - Yang, Limei
AU - Holmes, Natalie P.
AU - Griffith, Matthew J.
AU - Krogstrup, Peter
AU - Cairney, Julie M.
PY - 2022/10/12
Y1 - 2022/10/12
N2 - Atomic-scale information about the structural and compositional properties of novel semiconductor nanowires is essential to tailoring their properties for specific applications, but characterization at this length scale remains a challenging task. Here, quasi-1D InAs/InGaAs semiconductor nanowire arrays were grown by selective area epitaxy (SAE) using molecular beam epitaxy (MBE), and their subsequent properties were analyzed by a combination of atom probe tomography (APT) and aberration -corrected transmission electron microscopy (TEM). Results revealed the chemical composition of the outermost thin InAs layer, a fine variation in the indium content at the InAs/InGaAs interface, and lightly incorporated element tracing. The results highlight the importance of correlative microscopy approaches in revealing complex nanoscale structures, with TEM being uniquely suited to interrogating the crystallography of InGaAs NWs, whereas APT is capable of three-dimensional (3D) elemental mapping, revealing the subtle compositional variation near the boundary region. This work demonstrates a detailed pathway for the nanoscale structural assessment of novel one-dimensional (1D) nanomaterials.
AB - Atomic-scale information about the structural and compositional properties of novel semiconductor nanowires is essential to tailoring their properties for specific applications, but characterization at this length scale remains a challenging task. Here, quasi-1D InAs/InGaAs semiconductor nanowire arrays were grown by selective area epitaxy (SAE) using molecular beam epitaxy (MBE), and their subsequent properties were analyzed by a combination of atom probe tomography (APT) and aberration -corrected transmission electron microscopy (TEM). Results revealed the chemical composition of the outermost thin InAs layer, a fine variation in the indium content at the InAs/InGaAs interface, and lightly incorporated element tracing. The results highlight the importance of correlative microscopy approaches in revealing complex nanoscale structures, with TEM being uniquely suited to interrogating the crystallography of InGaAs NWs, whereas APT is capable of three-dimensional (3D) elemental mapping, revealing the subtle compositional variation near the boundary region. This work demonstrates a detailed pathway for the nanoscale structural assessment of novel one-dimensional (1D) nanomaterials.
KW - InGaAs nanowires
KW - In segregation
KW - epitaxy growth
KW - atom probe tomography
KW - transmission electron microscopy
KW - III-V
KW - SURFACE SEGREGATION
KW - SOLAR-CELLS
KW - SILICON
U2 - 10.1021/acsami.2c09594
DO - 10.1021/acsami.2c09594
M3 - Journal article
C2 - 36222623
VL - 14
SP - 47981
EP - 47990
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
ER -
ID: 323975557