Characterization of top-gated Si/SiGe devices for spin qubit applications

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Standard

Characterization of top-gated Si/SiGe devices for spin qubit applications. / Ansaloni, Fabio; Volk, Christian; Chatterjee, Anasua; Kuemmeth, Ferdinand.

2019 SILICON NANOELECTRONICS WORKSHOP (SNW). Kyoto, Japan : IEEE, 2019. p. 111-112 (IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)).

Research output: Chapter in Book/Report/Conference proceedingArticle in proceedingsResearchpeer-review

Harvard

Ansaloni, F, Volk, C, Chatterjee, A & Kuemmeth, F 2019, Characterization of top-gated Si/SiGe devices for spin qubit applications. in 2019 SILICON NANOELECTRONICS WORKSHOP (SNW). IEEE, Kyoto, Japan, IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), pp. 111-112. https://doi.org/10.23919/SNW.2019.8782944

APA

Ansaloni, F., Volk, C., Chatterjee, A., & Kuemmeth, F. (2019). Characterization of top-gated Si/SiGe devices for spin qubit applications. In 2019 SILICON NANOELECTRONICS WORKSHOP (SNW) (pp. 111-112). IEEE. IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) https://doi.org/10.23919/SNW.2019.8782944

Vancouver

Ansaloni F, Volk C, Chatterjee A, Kuemmeth F. Characterization of top-gated Si/SiGe devices for spin qubit applications. In 2019 SILICON NANOELECTRONICS WORKSHOP (SNW). Kyoto, Japan: IEEE. 2019. p. 111-112. (IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)). https://doi.org/10.23919/SNW.2019.8782944

Author

Ansaloni, Fabio ; Volk, Christian ; Chatterjee, Anasua ; Kuemmeth, Ferdinand. / Characterization of top-gated Si/SiGe devices for spin qubit applications. 2019 SILICON NANOELECTRONICS WORKSHOP (SNW). Kyoto, Japan : IEEE, 2019. pp. 111-112 (IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)).

Bibtex

@inproceedings{b71e75bd2c7e472395aa9aec984cf9a4,
title = "Characterization of top-gated Si/SiGe devices for spin qubit applications",
author = "Fabio Ansaloni and Christian Volk and Anasua Chatterjee and Ferdinand Kuemmeth",
year = "2019",
month = jun,
day = "9",
doi = "10.23919/SNW.2019.8782944",
language = "English",
series = "IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)",
pages = "111--112",
booktitle = "2019 SILICON NANOELECTRONICS WORKSHOP (SNW)",
publisher = "IEEE",

}

RIS

TY - GEN

T1 - Characterization of top-gated Si/SiGe devices for spin qubit applications

AU - Ansaloni, Fabio

AU - Volk, Christian

AU - Chatterjee, Anasua

AU - Kuemmeth, Ferdinand

PY - 2019/6/9

Y1 - 2019/6/9

U2 - 10.23919/SNW.2019.8782944

DO - 10.23919/SNW.2019.8782944

M3 - Article in proceedings

T3 - IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)

SP - 111

EP - 112

BT - 2019 SILICON NANOELECTRONICS WORKSHOP (SNW)

PB - IEEE

CY - Kyoto, Japan

ER -

ID: 234084719