Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure

Research output: Contribution to journalJournal articlepeer-review

Standard

Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces : Band Alignment and Magnetic Structure. / Liu, Yu; Luchini, Alessandra; Marti-Sanchez, Sara; Koch, Christian; Schuwalow, Sergej; Khan, Sabbir A.; Stankevic, Tomas; Francoual, Sonia; Mardegan, Jose R. L.; Krieger, Jonas A.; Strocov, Vladimir N.; Stahn, Jochen; Vaz, Carlos A. F.; Ramakrishnan, Mahesh; Staub, Urs; Lefmann, Kim; Aeppli, Gabriel; Arbiol, Jordi; Krogstrup, Peter.

In: A C S Applied Materials and Interfaces, Vol. 12, No. 7, 19.02.2020, p. 8780-8787.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Liu, Y, Luchini, A, Marti-Sanchez, S, Koch, C, Schuwalow, S, Khan, SA, Stankevic, T, Francoual, S, Mardegan, JRL, Krieger, JA, Strocov, VN, Stahn, J, Vaz, CAF, Ramakrishnan, M, Staub, U, Lefmann, K, Aeppli, G, Arbiol, J & Krogstrup, P 2020, 'Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure', A C S Applied Materials and Interfaces, vol. 12, no. 7, pp. 8780-8787. https://doi.org/10.1021/acsami.9b15034

APA

Liu, Y., Luchini, A., Marti-Sanchez, S., Koch, C., Schuwalow, S., Khan, S. A., Stankevic, T., Francoual, S., Mardegan, J. R. L., Krieger, J. A., Strocov, V. N., Stahn, J., Vaz, C. A. F., Ramakrishnan, M., Staub, U., Lefmann, K., Aeppli, G., Arbiol, J., & Krogstrup, P. (2020). Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure. A C S Applied Materials and Interfaces, 12(7), 8780-8787. https://doi.org/10.1021/acsami.9b15034

Vancouver

Liu Y, Luchini A, Marti-Sanchez S, Koch C, Schuwalow S, Khan SA et al. Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure. A C S Applied Materials and Interfaces. 2020 Feb 19;12(7):8780-8787. https://doi.org/10.1021/acsami.9b15034

Author

Liu, Yu ; Luchini, Alessandra ; Marti-Sanchez, Sara ; Koch, Christian ; Schuwalow, Sergej ; Khan, Sabbir A. ; Stankevic, Tomas ; Francoual, Sonia ; Mardegan, Jose R. L. ; Krieger, Jonas A. ; Strocov, Vladimir N. ; Stahn, Jochen ; Vaz, Carlos A. F. ; Ramakrishnan, Mahesh ; Staub, Urs ; Lefmann, Kim ; Aeppli, Gabriel ; Arbiol, Jordi ; Krogstrup, Peter. / Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces : Band Alignment and Magnetic Structure. In: A C S Applied Materials and Interfaces. 2020 ; Vol. 12, No. 7. pp. 8780-8787.

Bibtex

@article{a411719d215640ba8f915e5fc5e98733,
title = "Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure",
abstract = "Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields.",
keywords = "quantum computing, proximity effects, MBE, hybrid materials, magnetic proximity, exchange field, band alignment, EUS, SUPERCONDUCTOR, DIFFRACTION, BEAMLINE, FIELD, POLARIZATION, PRINCIPLES, SCATTERING, ADRESS, GROWTH",
author = "Yu Liu and Alessandra Luchini and Sara Marti-Sanchez and Christian Koch and Sergej Schuwalow and Khan, {Sabbir A.} and Tomas Stankevic and Sonia Francoual and Mardegan, {Jose R. L.} and Krieger, {Jonas A.} and Strocov, {Vladimir N.} and Jochen Stahn and Vaz, {Carlos A. F.} and Mahesh Ramakrishnan and Urs Staub and Kim Lefmann and Gabriel Aeppli and Jordi Arbiol and Peter Krogstrup",
year = "2020",
month = feb,
day = "19",
doi = "10.1021/acsami.9b15034",
language = "English",
volume = "12",
pages = "8780--8787",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "7",

}

RIS

TY - JOUR

T1 - Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces

T2 - Band Alignment and Magnetic Structure

AU - Liu, Yu

AU - Luchini, Alessandra

AU - Marti-Sanchez, Sara

AU - Koch, Christian

AU - Schuwalow, Sergej

AU - Khan, Sabbir A.

AU - Stankevic, Tomas

AU - Francoual, Sonia

AU - Mardegan, Jose R. L.

AU - Krieger, Jonas A.

AU - Strocov, Vladimir N.

AU - Stahn, Jochen

AU - Vaz, Carlos A. F.

AU - Ramakrishnan, Mahesh

AU - Staub, Urs

AU - Lefmann, Kim

AU - Aeppli, Gabriel

AU - Arbiol, Jordi

AU - Krogstrup, Peter

PY - 2020/2/19

Y1 - 2020/2/19

N2 - Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields.

AB - Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. The Fermi level at the InAs/EuS interface is found to be close to the InAs conduction band and in the band gap of EuS, thus preserving the semiconducting properties. Both neutron and X-ray reflectivity measurements show that the overall ferromagnetic component is mainly localized in the EuS thin film with a suppression of the Eu moment in the EuS layer nearest the InAs and magnetic moments outside the detection limits on the pure InAs side. This work presents a step toward realizing defect-free semiconductor-ferromagnetic insulator epitaxial hybrids for spin-lifted quantum and spintronic applications without external magnetic fields.

KW - quantum computing

KW - proximity effects

KW - MBE

KW - hybrid materials

KW - magnetic proximity

KW - exchange field

KW - band alignment

KW - EUS

KW - SUPERCONDUCTOR

KW - DIFFRACTION

KW - BEAMLINE

KW - FIELD

KW - POLARIZATION

KW - PRINCIPLES

KW - SCATTERING

KW - ADRESS

KW - GROWTH

U2 - 10.1021/acsami.9b15034

DO - 10.1021/acsami.9b15034

M3 - Journal article

C2 - 31877013

VL - 12

SP - 8780

EP - 8787

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 7

ER -

ID: 248026464