Double Nanowires for Hybrid Quantum Devices

Research output: Contribution to journalJournal articlepeer-review

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Double Nanowires for Hybrid Quantum Devices. / Kanne, Thomas; Olsteins, Dags; Marnauza, Mikelis; Vekris, Alexandros; Saldana, Juan Carlos Estrada; Loric, Sara; Schlosser, Rasmus D.; Ross, Daniel; Csonka, Szabolcs; Grove-Rasmussen, Kasper; Nygård, Jesper.

In: Advanced Functional Materials, Vol. 32, No. 9, 2107926, 21.11.2021.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Kanne, T, Olsteins, D, Marnauza, M, Vekris, A, Saldana, JCE, Loric, S, Schlosser, RD, Ross, D, Csonka, S, Grove-Rasmussen, K & Nygård, J 2021, 'Double Nanowires for Hybrid Quantum Devices', Advanced Functional Materials, vol. 32, no. 9, 2107926. https://doi.org/10.1002/adfm.202107926

APA

Kanne, T., Olsteins, D., Marnauza, M., Vekris, A., Saldana, J. C. E., Loric, S., Schlosser, R. D., Ross, D., Csonka, S., Grove-Rasmussen, K., & Nygård, J. (2021). Double Nanowires for Hybrid Quantum Devices. Advanced Functional Materials, 32(9), [2107926]. https://doi.org/10.1002/adfm.202107926

Vancouver

Kanne T, Olsteins D, Marnauza M, Vekris A, Saldana JCE, Loric S et al. Double Nanowires for Hybrid Quantum Devices. Advanced Functional Materials. 2021 Nov 21;32(9). 2107926. https://doi.org/10.1002/adfm.202107926

Author

Kanne, Thomas ; Olsteins, Dags ; Marnauza, Mikelis ; Vekris, Alexandros ; Saldana, Juan Carlos Estrada ; Loric, Sara ; Schlosser, Rasmus D. ; Ross, Daniel ; Csonka, Szabolcs ; Grove-Rasmussen, Kasper ; Nygård, Jesper. / Double Nanowires for Hybrid Quantum Devices. In: Advanced Functional Materials. 2021 ; Vol. 32, No. 9.

Bibtex

@article{48d9198532184bb580d4cd73e94f974e,
title = "Double Nanowires for Hybrid Quantum Devices",
abstract = "Parallel 1D semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely, for example, on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity, and the coupling between the different elements should be controllable in terms of their interfaces and geometry. A strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy is presented. A superconducting layer is deposited onto nanowires without breaking the vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires with full or half-shell superconductor coatings. Their utility in complex quantum devices by electron transport measurements is demonstrated.",
keywords = "hybrid semiconductor-superconductor nanomaterials, parallel nanowires, quantum materials, semiconductor nanowires, TRANSPORT, EPITAXY, GROWTH",
author = "Thomas Kanne and Dags Olsteins and Mikelis Marnauza and Alexandros Vekris and Saldana, {Juan Carlos Estrada} and Sara Loric and Schlosser, {Rasmus D.} and Daniel Ross and Szabolcs Csonka and Kasper Grove-Rasmussen and Jesper Nyg{\aa}rd",
year = "2021",
month = nov,
day = "21",
doi = "10.1002/adfm.202107926",
language = "English",
volume = "32",
journal = "Advanced Functional Materials",
issn = "1616-301X",
publisher = "Wiley - V C H Verlag GmbH & Co. KGaA",
number = "9",

}

RIS

TY - JOUR

T1 - Double Nanowires for Hybrid Quantum Devices

AU - Kanne, Thomas

AU - Olsteins, Dags

AU - Marnauza, Mikelis

AU - Vekris, Alexandros

AU - Saldana, Juan Carlos Estrada

AU - Loric, Sara

AU - Schlosser, Rasmus D.

AU - Ross, Daniel

AU - Csonka, Szabolcs

AU - Grove-Rasmussen, Kasper

AU - Nygård, Jesper

PY - 2021/11/21

Y1 - 2021/11/21

N2 - Parallel 1D semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely, for example, on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity, and the coupling between the different elements should be controllable in terms of their interfaces and geometry. A strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy is presented. A superconducting layer is deposited onto nanowires without breaking the vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires with full or half-shell superconductor coatings. Their utility in complex quantum devices by electron transport measurements is demonstrated.

AB - Parallel 1D semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely, for example, on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity, and the coupling between the different elements should be controllable in terms of their interfaces and geometry. A strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy is presented. A superconducting layer is deposited onto nanowires without breaking the vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires with full or half-shell superconductor coatings. Their utility in complex quantum devices by electron transport measurements is demonstrated.

KW - hybrid semiconductor-superconductor nanomaterials

KW - parallel nanowires

KW - quantum materials

KW - semiconductor nanowires

KW - TRANSPORT

KW - EPITAXY

KW - GROWTH

U2 - 10.1002/adfm.202107926

DO - 10.1002/adfm.202107926

M3 - Journal article

VL - 32

JO - Advanced Functional Materials

JF - Advanced Functional Materials

SN - 1616-301X

IS - 9

M1 - 2107926

ER -

ID: 285726141