Double Nanowires for Hybrid Quantum Devices

Research output: Contribution to journalJournal articleResearchpeer-review

Parallel 1D semiconductor channels connected by a superconducting strip constitute the core platform in several recent quantum device proposals that rely, for example, on Andreev processes or topological effects. In order to realize these proposals, the actual material systems must have high crystalline purity, and the coupling between the different elements should be controllable in terms of their interfaces and geometry. A strategy for synthesizing double InAs nanowires by the vapor-liquid-solid mechanism using III-V molecular beam epitaxy is presented. A superconducting layer is deposited onto nanowires without breaking the vacuum, ensuring pristine interfaces between the superconductor and the two semiconductor nanowires. The method allows for a high yield of merged as well as separate parallel nanowires with full or half-shell superconductor coatings. Their utility in complex quantum devices by electron transport measurements is demonstrated.

Original languageEnglish
Article number2107926
JournalAdvanced Functional Materials
Number of pages9
Publication statusE-pub ahead of print - 21 Nov 2021

    Research areas

  • hybrid semiconductor-superconductor nanomaterials, parallel nanowires, quantum materials, semiconductor nanowires, TRANSPORT, EPITAXY, GROWTH


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