Doubling the mobility of InAs/InGaAs selective area grown nanowires

Research output: Contribution to journalJournal articleResearchpeer-review

  • Daria Beznasiuk
  • Sara Marti-Sanchez
  • Jung-Hyun Kang
  • Rawa Tanta
  • Tomas Stankevic
  • Mohana Rajpalke
  • Anna Wulff Christensen
  • Maria Chiara Spadaro
  • Roberto Bergamaschini
  • Nikhil N. Maka
  • Christian Emanuel N. Petersen
  • Carrad, Damon James
  • Thomas Sand Jespersen
  • Jordi Arbiol
  • Jeppesen, Peter Krogstrup

Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics, and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realised, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and nonuniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an InxGa1-xAs buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high-quality InAs transport channels with the field-effect electron mobility over 10 000 cm(2) V-1 s(-1). This is twice as high as for nonoptimized samples and among the highest reported for InAs selective area grown nanostructures.

Original languageEnglish
Article number034602
JournalPhysical Review Materials
Volume6
Issue number3
Number of pages9
ISSN2475-9953
DOIs
Publication statusPublished - 16 Mar 2022

    Research areas

  • MOLECULAR-BEAM EPITAXY, ELECTRONIC-PROPERTIES, ALLOY SCATTERING, GAAS, DESORPTION, OXIDE, SEGREGATION, SUBSTRATE, SURFACES, GE

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