Electroabsorption in gated GaAs nanophotonic waveguides

Research output: Contribution to journalJournal articlepeer-review

Standard

Electroabsorption in gated GaAs nanophotonic waveguides. / Wang, Ying; Uppu, Ravitej; Zhou, Xiaoyan; Papon, Camille; Scholz, Sven; Wieck, Andreas D.; Ludwig, Arne; Lodahl, Peter; Midolo, Leonardo.

In: Applied Physics Letters, Vol. 118, No. 13, 131106, 29.03.2021.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Wang, Y, Uppu, R, Zhou, X, Papon, C, Scholz, S, Wieck, AD, Ludwig, A, Lodahl, P & Midolo, L 2021, 'Electroabsorption in gated GaAs nanophotonic waveguides', Applied Physics Letters, vol. 118, no. 13, 131106. https://doi.org/10.1063/5.0039373

APA

Wang, Y., Uppu, R., Zhou, X., Papon, C., Scholz, S., Wieck, A. D., Ludwig, A., Lodahl, P., & Midolo, L. (2021). Electroabsorption in gated GaAs nanophotonic waveguides. Applied Physics Letters, 118(13), [131106]. https://doi.org/10.1063/5.0039373

Vancouver

Wang Y, Uppu R, Zhou X, Papon C, Scholz S, Wieck AD et al. Electroabsorption in gated GaAs nanophotonic waveguides. Applied Physics Letters. 2021 Mar 29;118(13). 131106. https://doi.org/10.1063/5.0039373

Author

Wang, Ying ; Uppu, Ravitej ; Zhou, Xiaoyan ; Papon, Camille ; Scholz, Sven ; Wieck, Andreas D. ; Ludwig, Arne ; Lodahl, Peter ; Midolo, Leonardo. / Electroabsorption in gated GaAs nanophotonic waveguides. In: Applied Physics Letters. 2021 ; Vol. 118, No. 13.

Bibtex

@article{c0d71313ba75470aa2d7fb2b3923b02a,
title = "Electroabsorption in gated GaAs nanophotonic waveguides",
abstract = "We report on the analysis of electroabsorption in thin GaAs/Al0.3Ga0.7As nanophotonic waveguides with an embedded p-i-n junction. By measuring the transmission through waveguides of different lengths, we derive the propagation loss as a function of electric field, wavelength, and temperature. The results are in good agreement with the Franz-Keldysh model of electroabsorption extending over 200meV below the GaAs bandgap, i.e., in the wavelength range of 910-970nm. We find a pronounced residual absorption in forward bias, which we attribute to Fermi-level pinning at the waveguide surface, producing over 20dB/mm loss at room temperature. These results are essential for understanding the origin of loss in nanophotonic devices operating in the emission range of self-assembled InAs semiconductor quantum dots toward the realization of scalable quantum photonic integrated circuits.",
author = "Ying Wang and Ravitej Uppu and Xiaoyan Zhou and Camille Papon and Sven Scholz and Wieck, {Andreas D.} and Arne Ludwig and Peter Lodahl and Leonardo Midolo",
note = "Hy-Q",
year = "2021",
month = mar,
day = "29",
doi = "10.1063/5.0039373",
language = "English",
volume = "118",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "13",

}

RIS

TY - JOUR

T1 - Electroabsorption in gated GaAs nanophotonic waveguides

AU - Wang, Ying

AU - Uppu, Ravitej

AU - Zhou, Xiaoyan

AU - Papon, Camille

AU - Scholz, Sven

AU - Wieck, Andreas D.

AU - Ludwig, Arne

AU - Lodahl, Peter

AU - Midolo, Leonardo

N1 - Hy-Q

PY - 2021/3/29

Y1 - 2021/3/29

N2 - We report on the analysis of electroabsorption in thin GaAs/Al0.3Ga0.7As nanophotonic waveguides with an embedded p-i-n junction. By measuring the transmission through waveguides of different lengths, we derive the propagation loss as a function of electric field, wavelength, and temperature. The results are in good agreement with the Franz-Keldysh model of electroabsorption extending over 200meV below the GaAs bandgap, i.e., in the wavelength range of 910-970nm. We find a pronounced residual absorption in forward bias, which we attribute to Fermi-level pinning at the waveguide surface, producing over 20dB/mm loss at room temperature. These results are essential for understanding the origin of loss in nanophotonic devices operating in the emission range of self-assembled InAs semiconductor quantum dots toward the realization of scalable quantum photonic integrated circuits.

AB - We report on the analysis of electroabsorption in thin GaAs/Al0.3Ga0.7As nanophotonic waveguides with an embedded p-i-n junction. By measuring the transmission through waveguides of different lengths, we derive the propagation loss as a function of electric field, wavelength, and temperature. The results are in good agreement with the Franz-Keldysh model of electroabsorption extending over 200meV below the GaAs bandgap, i.e., in the wavelength range of 910-970nm. We find a pronounced residual absorption in forward bias, which we attribute to Fermi-level pinning at the waveguide surface, producing over 20dB/mm loss at room temperature. These results are essential for understanding the origin of loss in nanophotonic devices operating in the emission range of self-assembled InAs semiconductor quantum dots toward the realization of scalable quantum photonic integrated circuits.

U2 - 10.1063/5.0039373

DO - 10.1063/5.0039373

M3 - Journal article

VL - 118

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 13

M1 - 131106

ER -

ID: 260589485