Hard gap in epitaxial semiconductor-superconductor nanowires

Research output: Contribution to journalJournal articlepeer-review

Standard

Hard gap in epitaxial semiconductor-superconductor nanowires. / Chang, W.; Albrecht, S. M.; Jespersen, T. S.; Kuemmeth, Ferdinand; Krogstrup, Peter; Nygård, J.; Marcus, Charles M.

In: Nature Nanotechnology, Vol. 10, No. 3, 2015, p. 232-236.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Chang, W, Albrecht, SM, Jespersen, TS, Kuemmeth, F, Krogstrup, P, Nygård, J & Marcus, CM 2015, 'Hard gap in epitaxial semiconductor-superconductor nanowires', Nature Nanotechnology, vol. 10, no. 3, pp. 232-236. https://doi.org/10.1038/nnano.2014.306

APA

Chang, W., Albrecht, S. M., Jespersen, T. S., Kuemmeth, F., Krogstrup, P., Nygård, J., & Marcus, C. M. (2015). Hard gap in epitaxial semiconductor-superconductor nanowires. Nature Nanotechnology, 10(3), 232-236. https://doi.org/10.1038/nnano.2014.306

Vancouver

Chang W, Albrecht SM, Jespersen TS, Kuemmeth F, Krogstrup P, Nygård J et al. Hard gap in epitaxial semiconductor-superconductor nanowires. Nature Nanotechnology. 2015;10(3):232-236. https://doi.org/10.1038/nnano.2014.306

Author

Chang, W. ; Albrecht, S. M. ; Jespersen, T. S. ; Kuemmeth, Ferdinand ; Krogstrup, Peter ; Nygård, J. ; Marcus, Charles M. / Hard gap in epitaxial semiconductor-superconductor nanowires. In: Nature Nanotechnology. 2015 ; Vol. 10, No. 3. pp. 232-236.

Bibtex

@article{bca9666775554c36bb0444a14e490f14,
title = "Hard gap in epitaxial semiconductor-superconductor nanowires",
abstract = "Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunneling conductance below the superconducting gap, suggesting a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity.",
keywords = "cond-mat.mes-hall, cond-mat.mtrl-sci, cond-mat.supr-con",
author = "W. Chang and Albrecht, {S. M.} and Jespersen, {T. S.} and Ferdinand Kuemmeth and Peter Krogstrup and J. Nyg{\aa}rd and Marcus, {Charles M.}",
note = "[QDev]",
year = "2015",
doi = "10.1038/nnano.2014.306",
language = "English",
volume = "10",
pages = "232--236",
journal = "Nature Nanotechnology",
issn = "1748-3387",
publisher = "nature publishing group",
number = "3",

}

RIS

TY - JOUR

T1 - Hard gap in epitaxial semiconductor-superconductor nanowires

AU - Chang, W.

AU - Albrecht, S. M.

AU - Jespersen, T. S.

AU - Kuemmeth, Ferdinand

AU - Krogstrup, Peter

AU - Nygård, J.

AU - Marcus, Charles M.

N1 - [QDev]

PY - 2015

Y1 - 2015

N2 - Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunneling conductance below the superconducting gap, suggesting a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity.

AB - Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunneling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunneling conductance below the superconducting gap, suggesting a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity.

KW - cond-mat.mes-hall

KW - cond-mat.mtrl-sci

KW - cond-mat.supr-con

U2 - 10.1038/nnano.2014.306

DO - 10.1038/nnano.2014.306

M3 - Journal article

VL - 10

SP - 232

EP - 236

JO - Nature Nanotechnology

JF - Nature Nanotechnology

SN - 1748-3387

IS - 3

ER -

ID: 130515530