Hole Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

Hole Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits. / Hu, Yongjie; Kuemmeth, Ferdinand; Lieber, Charles; M. Marcus, Charles.

In: Nature Nanotechnology, Vol. 7, 21.10.2011, p. 47-50.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Hu, Y, Kuemmeth, F, Lieber, C & M. Marcus, C 2011, 'Hole Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits', Nature Nanotechnology, vol. 7, pp. 47-50. https://doi.org/10.1038/nnano.2011.234

APA

Hu, Y., Kuemmeth, F., Lieber, C., & M. Marcus, C. (2011). Hole Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits. Nature Nanotechnology, 7, 47-50. https://doi.org/10.1038/nnano.2011.234

Vancouver

Hu Y, Kuemmeth F, Lieber C, M. Marcus C. Hole Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits. Nature Nanotechnology. 2011 Oct 21;7:47-50. https://doi.org/10.1038/nnano.2011.234

Author

Hu, Yongjie ; Kuemmeth, Ferdinand ; Lieber, Charles ; M. Marcus, Charles. / Hole Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits. In: Nature Nanotechnology. 2011 ; Vol. 7. pp. 47-50.

Bibtex

@article{9377e0f2e17443baa52cee15231fbc34,
title = "Hole Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits",
abstract = "Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins in the substrate hinders this approach. To realize spin qubits in a nuclear-spin-free system, intensive studies based on group-IV semiconductor are being pursued. In this case, the challenge is primarily control of materials and interfaces, and device nanofabrication. We report important steps toward implementing spin qubits in a predominantly nuclear-spin-free system by demonstrating state preparation, pulsed gate control, and charge-sensing spin readout of confined hole spins in a one-dimensional Ge/Si nanowire. With fast gating, we measure T1 spin relaxation times in coupled quantum dots approaching 1 ms, increasing with lower magnetic field, consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions.",
keywords = "cond-mat.mes-hall, quant-ph",
author = "Yongjie Hu and Ferdinand Kuemmeth and Charles Lieber and {M. Marcus}, Charles",
year = "2011",
month = oct,
day = "21",
doi = "10.1038/nnano.2011.234",
language = "English",
volume = "7",
pages = "47--50",
journal = "Nature Nanotechnology",
issn = "1748-3387",
publisher = "nature publishing group",

}

RIS

TY - JOUR

T1 - Hole Spin Relaxation in Ge/Si Core-Shell Nanowire Qubits

AU - Hu, Yongjie

AU - Kuemmeth, Ferdinand

AU - Lieber, Charles

AU - M. Marcus, Charles

PY - 2011/10/21

Y1 - 2011/10/21

N2 - Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins in the substrate hinders this approach. To realize spin qubits in a nuclear-spin-free system, intensive studies based on group-IV semiconductor are being pursued. In this case, the challenge is primarily control of materials and interfaces, and device nanofabrication. We report important steps toward implementing spin qubits in a predominantly nuclear-spin-free system by demonstrating state preparation, pulsed gate control, and charge-sensing spin readout of confined hole spins in a one-dimensional Ge/Si nanowire. With fast gating, we measure T1 spin relaxation times in coupled quantum dots approaching 1 ms, increasing with lower magnetic field, consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions.

AB - Controlling decoherence is the most challenging task in realizing quantum information hardware. Single electron spins in gallium arsenide are a leading candidate among solid- state implementations, however strong coupling to nuclear spins in the substrate hinders this approach. To realize spin qubits in a nuclear-spin-free system, intensive studies based on group-IV semiconductor are being pursued. In this case, the challenge is primarily control of materials and interfaces, and device nanofabrication. We report important steps toward implementing spin qubits in a predominantly nuclear-spin-free system by demonstrating state preparation, pulsed gate control, and charge-sensing spin readout of confined hole spins in a one-dimensional Ge/Si nanowire. With fast gating, we measure T1 spin relaxation times in coupled quantum dots approaching 1 ms, increasing with lower magnetic field, consistent with a spin-orbit mechanism that is usually masked by hyperfine contributions.

KW - cond-mat.mes-hall

KW - quant-ph

U2 - 10.1038/nnano.2011.234

DO - 10.1038/nnano.2011.234

M3 - Journal article

C2 - 22179569

VL - 7

SP - 47

EP - 50

JO - Nature Nanotechnology

JF - Nature Nanotechnology

SN - 1748-3387

ER -

ID: 38327205