InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices. / Kousar, Bilal; Carrad, Damon J.; Stampfer, Lukas; Krogstrup, Peter; Nygard, Jesper; Jespersen, Thomas S.

In: Nano Letters, Vol. 2022, 04.11.2022, p. 8845-8851.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Kousar, B, Carrad, DJ, Stampfer, L, Krogstrup, P, Nygard, J & Jespersen, TS 2022, 'InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices', Nano Letters, vol. 2022, pp. 8845-8851. https://doi.org/10.1021/acs.nanolett.2c02532

APA

Kousar, B., Carrad, D. J., Stampfer, L., Krogstrup, P., Nygard, J., & Jespersen, T. S. (2022). InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices. Nano Letters, 2022, 8845-8851. https://doi.org/10.1021/acs.nanolett.2c02532

Vancouver

Kousar B, Carrad DJ, Stampfer L, Krogstrup P, Nygard J, Jespersen TS. InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices. Nano Letters. 2022 Nov 4;2022:8845-8851. https://doi.org/10.1021/acs.nanolett.2c02532

Author

Kousar, Bilal ; Carrad, Damon J. ; Stampfer, Lukas ; Krogstrup, Peter ; Nygard, Jesper ; Jespersen, Thomas S. / InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices. In: Nano Letters. 2022 ; Vol. 2022. pp. 8845-8851.

Bibtex

@article{db707e89d09546328f06e08976399b6d,
title = "InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices",
abstract = "Implementing superconductors capable of proximity-inducing a large energy gap in semiconductors in the presence of strong magnetic fields is a major goal toward applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact with molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures of similar to 10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to similar to 10 K, and MoRebased Josephson devices exhibited supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature and observe gap softening at finite magnetic field. These may be common features for hybrids based on large-gap, type II superconductors. The results encourage further development of MoRe-based hybrids.",
keywords = "semiconductor, superconductor hybrid, molybdenum-rhenium, indium arsenide, nanowire, tunnel spectroscopy, Josephson junction, JOSEPHSON-JUNCTIONS, SUPERCURRENT, SUPERCONDUCTIVITY, EPITAXY, GROWTH, LENGTH, GAP",
author = "Bilal Kousar and Carrad, {Damon J.} and Lukas Stampfer and Peter Krogstrup and Jesper Nygard and Jespersen, {Thomas S.}",
year = "2022",
month = nov,
day = "4",
doi = "10.1021/acs.nanolett.2c02532",
language = "English",
volume = "2022",
pages = "8845--8851",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",

}

RIS

TY - JOUR

T1 - InAs/MoRe Hybrid Semiconductor/Superconductor Nanowire Devices

AU - Kousar, Bilal

AU - Carrad, Damon J.

AU - Stampfer, Lukas

AU - Krogstrup, Peter

AU - Nygard, Jesper

AU - Jespersen, Thomas S.

PY - 2022/11/4

Y1 - 2022/11/4

N2 - Implementing superconductors capable of proximity-inducing a large energy gap in semiconductors in the presence of strong magnetic fields is a major goal toward applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact with molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures of similar to 10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to similar to 10 K, and MoRebased Josephson devices exhibited supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature and observe gap softening at finite magnetic field. These may be common features for hybrids based on large-gap, type II superconductors. The results encourage further development of MoRe-based hybrids.

AB - Implementing superconductors capable of proximity-inducing a large energy gap in semiconductors in the presence of strong magnetic fields is a major goal toward applications of semiconductor/superconductor hybrid materials in future quantum information technologies. Here, we study the performance of devices consisting of InAs nanowires in electrical contact with molybdenum-rhenium (MoRe) superconducting alloys. The MoRe thin films exhibit transition temperatures of similar to 10 K and critical fields exceeding 6 T. Normal/superconductor devices enabled tunnel spectroscopy of the corresponding induced superconductivity, which was maintained up to similar to 10 K, and MoRebased Josephson devices exhibited supercurrents and multiple Andreev reflections. We determine an induced superconducting gap lower than expected from the transition temperature and observe gap softening at finite magnetic field. These may be common features for hybrids based on large-gap, type II superconductors. The results encourage further development of MoRe-based hybrids.

KW - semiconductor

KW - superconductor hybrid

KW - molybdenum-rhenium

KW - indium arsenide

KW - nanowire

KW - tunnel spectroscopy

KW - Josephson junction

KW - JOSEPHSON-JUNCTIONS

KW - SUPERCURRENT

KW - SUPERCONDUCTIVITY

KW - EPITAXY

KW - GROWTH

KW - LENGTH

KW - GAP

U2 - 10.1021/acs.nanolett.2c02532

DO - 10.1021/acs.nanolett.2c02532

M3 - Journal article

C2 - 36332116

VL - 2022

SP - 8845

EP - 8851

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

ER -

ID: 326729211