Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion
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Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion. / Gluschke, J. G.; Seidl, J.; Lyttleton, R. W.; Nguyen, K.; Lagier, M.; Meyer, F.; Krogstrup, P.; Nygård, J.; Lehmann, S.; Mostert, A. B.; Meredith, P.; Micolich, A. P.
In: Materials Horizons, Vol. 8, No. 1, 2021, p. 224-233.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - Integrated bioelectronic proton-gated logic elements utilizing nanoscale patterned Nafion
AU - Gluschke, J. G.
AU - Seidl, J.
AU - Lyttleton, R. W.
AU - Nguyen, K.
AU - Lagier, M.
AU - Meyer, F.
AU - Krogstrup, P.
AU - Nygård, J.
AU - Lehmann, S.
AU - Mostert, A. B.
AU - Meredith, P.
AU - Micolich, A. P.
N1 - Publisher Copyright: © The Royal Society of Chemistry.
PY - 2021
Y1 - 2021
N2 - A central endeavour in bioelectronics is the development of logic elements to transduce and process ionic to electronic signals. Motivated by this challenge, we report fully monolithic, nanoscale logic elements featuring n- and p-type nanowires as electronic channels that are proton-gated by electron-beam patterned Nafion. We demonstrate inverter circuits with state-of-the-art ion-to-electron transduction performance giving DC gain exceeding 5 and frequency response up to 2 kHz. A key innovation facilitating the logic integration is a new electron-beam process for patterning Nafion with linewidths down to 125 nm. This process delivers feature sizes compatible with low voltage, fast switching elements. This expands the scope for Nafion as a versatile patternable high-proton-conductivity element for bioelectronics and other applications requiring nanoengineered protonic membranes and electrodes.
AB - A central endeavour in bioelectronics is the development of logic elements to transduce and process ionic to electronic signals. Motivated by this challenge, we report fully monolithic, nanoscale logic elements featuring n- and p-type nanowires as electronic channels that are proton-gated by electron-beam patterned Nafion. We demonstrate inverter circuits with state-of-the-art ion-to-electron transduction performance giving DC gain exceeding 5 and frequency response up to 2 kHz. A key innovation facilitating the logic integration is a new electron-beam process for patterning Nafion with linewidths down to 125 nm. This process delivers feature sizes compatible with low voltage, fast switching elements. This expands the scope for Nafion as a versatile patternable high-proton-conductivity element for bioelectronics and other applications requiring nanoengineered protonic membranes and electrodes.
U2 - 10.1039/d0mh01070g
DO - 10.1039/d0mh01070g
M3 - Journal article
C2 - 34821301
AN - SCOPUS:85099541675
VL - 8
SP - 224
EP - 233
JO - Materials Horizons
JF - Materials Horizons
SN - 2051-6347
IS - 1
ER -
ID: 306675138