Low temperature transport in p-doped InAs nanowires

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

Low temperature transport in p-doped InAs nanowires. / Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal; Krogstrup, Peter; Nygård, Jesper.

In: Applied Physics Letters, Vol. 103, No. 16, 162104, 01.10.2013.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Upadhyay, S, Jespersen, TS, Madsen, MH, Krogstrup, P & Nygård, J 2013, 'Low temperature transport in p-doped InAs nanowires', Applied Physics Letters, vol. 103, no. 16, 162104. https://doi.org/10.1063/1.4825275

APA

Upadhyay, S., Jespersen, T. S., Madsen, M. H., Krogstrup, P., & Nygård, J. (2013). Low temperature transport in p-doped InAs nanowires. Applied Physics Letters, 103(16), [162104]. https://doi.org/10.1063/1.4825275

Vancouver

Upadhyay S, Jespersen TS, Madsen MH, Krogstrup P, Nygård J. Low temperature transport in p-doped InAs nanowires. Applied Physics Letters. 2013 Oct 1;103(16). 162104. https://doi.org/10.1063/1.4825275

Author

Upadhyay, Shivendra ; Jespersen, Thomas Sand ; Madsen, Morten Hannibal ; Krogstrup, Peter ; Nygård, Jesper. / Low temperature transport in p-doped InAs nanowires. In: Applied Physics Letters. 2013 ; Vol. 103, No. 16.

Bibtex

@article{9e4f2d48cc2c45d3ba2da54c3dc5f25a,
title = "Low temperature transport in p-doped InAs nanowires",
abstract = "We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.",
author = "Shivendra Upadhyay and Jespersen, {Thomas Sand} and Madsen, {Morten Hannibal} and Peter Krogstrup and Jesper Nyg{\aa}rd",
year = "2013",
month = oct,
day = "1",
doi = "10.1063/1.4825275",
language = "English",
volume = "103",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "16",

}

RIS

TY - JOUR

T1 - Low temperature transport in p-doped InAs nanowires

AU - Upadhyay, Shivendra

AU - Jespersen, Thomas Sand

AU - Madsen, Morten Hannibal

AU - Krogstrup, Peter

AU - Nygård, Jesper

PY - 2013/10/1

Y1 - 2013/10/1

N2 - We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

AB - We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.

U2 - 10.1063/1.4825275

DO - 10.1063/1.4825275

M3 - Journal article

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 162104

ER -

ID: 92233444