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Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon. / Russo-Averchi, E.; Heiss, M.; Michelet, L.; Krogstrup, Peter; Nygård, Jesper; Magen, C.; Morante, J.R.; Arbiol, J.; i Morral, A.F.
In:
Nanoscale, Vol. 4, 19.01.2012, p. 1486-1490.
Research output: Contribution to journal › Journal article › Research › peer-review
Harvard
Russo-Averchi, E, Heiss, M, Michelet, L
, Krogstrup, P, Nygård, J, Magen, C, Morante, JR, Arbiol, J & i Morral, AF 2012, '
Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon',
Nanoscale, vol. 4, pp. 1486-1490.
https://doi.org/10.1039/C2NR11799AAPA
Russo-Averchi, E., Heiss, M., Michelet, L.
, Krogstrup, P., Nygård, J., Magen, C., Morante, J. R., Arbiol, J., & i Morral, A. F. (2012).
Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon.
Nanoscale,
4, 1486-1490.
https://doi.org/10.1039/C2NR11799AVancouver
Russo-Averchi E, Heiss M, Michelet L
, Krogstrup P, Nygård J, Magen C et al.
Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon.
Nanoscale. 2012 Jan 19;4:1486-1490.
https://doi.org/10.1039/C2NR11799AAuthor
Russo-Averchi, E. ; Heiss, M. ; Michelet, L. ; Krogstrup, Peter ; Nygård, Jesper ; Magen, C. ; Morante, J.R. ; Arbiol, J. ; i Morral, A.F. / Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon. In: Nanoscale. 2012 ; Vol. 4. pp. 1486-1490.
Bibtex
@article{c033e9f4f66e483197c694048ecf4e48,
title = "Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon",
author = "E. Russo-Averchi and M. Heiss and L. Michelet and Peter Krogstrup and Jesper Nyg{\aa}rd and C. Magen and J.R. Morante and J. Arbiol and {i Morral}, A.F.",
year = "2012",
month = jan,
day = "19",
doi = "10.1039/C2NR11799A",
language = "English",
volume = "4",
pages = "1486--1490",
journal = "Nanoscale",
issn = "2040-3364",
publisher = "Royal Society of Chemistry",
}
RIS
TY - JOUR
T1 - Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon
AU - Russo-Averchi, E.
AU - Heiss, M.
AU - Michelet, L.
AU - Krogstrup, Peter
AU - Nygård, Jesper
AU - Magen, C.
AU - Morante, J.R.
AU - Arbiol, J.
AU - i Morral, A.F.
PY - 2012/1/19
Y1 - 2012/1/19
U2 - 10.1039/C2NR11799A
DO - 10.1039/C2NR11799A
M3 - Journal article
VL - 4
SP - 1486
EP - 1490
JO - Nanoscale
JF - Nanoscale
SN - 2040-3364
ER -
