Tunneling broadening of vibrational sidebands in molecular transistors

Research output: Contribution to journalJournal articlepeer-review

Standard

Tunneling broadening of vibrational sidebands in molecular transistors. / Flensberg, Karsten.

In: Physical Review B. Condensed Matter and Materials Physics, Vol. 68, 2003, p. 205323.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Flensberg, K 2003, 'Tunneling broadening of vibrational sidebands in molecular transistors', Physical Review B. Condensed Matter and Materials Physics, vol. 68, pp. 205323.

APA

Flensberg, K. (2003). Tunneling broadening of vibrational sidebands in molecular transistors. Physical Review B. Condensed Matter and Materials Physics, 68, 205323.

Vancouver

Flensberg K. Tunneling broadening of vibrational sidebands in molecular transistors. Physical Review B. Condensed Matter and Materials Physics. 2003;68:205323.

Author

Flensberg, Karsten. / Tunneling broadening of vibrational sidebands in molecular transistors. In: Physical Review B. Condensed Matter and Materials Physics. 2003 ; Vol. 68. pp. 205323.

Bibtex

@article{79c46e1074c411dbbee902004c4f4f50,
title = "Tunneling broadening of vibrational sidebands in molecular transistors",
author = "Karsten Flensberg",
year = "2003",
language = "English",
volume = "68",
pages = "205323",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",

}

RIS

TY - JOUR

T1 - Tunneling broadening of vibrational sidebands in molecular transistors

AU - Flensberg, Karsten

PY - 2003

Y1 - 2003

M3 - Journal article

VL - 68

SP - 205323

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

ER -

ID: 114015