Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
Publikation: Bidrag til tidsskrift › Review › Forskning › fagfællebedømt
Dokumenter
- PhysRevApplied.16.044015
Forlagets udgivne version, 2,14 MB, PDF-dokument
We present a superconductor-semiconductor materials system that is both scalable and monolithically integrated on a silicon substrate. It uses selective-area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high-resistivity silicon substrate. We characterize the electrical properties of this materials system at millikelvin temperatures and observe a high average field-effect mobility of mu 3200 cm2/Vs for the InAs channel and a hard induced superconducting gap. Josephson junctions exhibit a high interface transmission, T 0.75, a gate-voltage-tunable switching current with a product of critical current and normal state resistance, ICRN 83 mu V, and signatures of multiple Andreev reflections. These results pave the way for scalable and high-coherence gate-voltage-tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.
Originalsprog | Engelsk |
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Artikelnummer | 044015 |
Tidsskrift | Physical Review Applied |
Vol/bind | 16 |
Udgave nummer | 4 |
Antal sider | 9 |
ISSN | 2331-7019 |
DOI | |
Status | Udgivet - 12 okt. 2021 |
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