Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Dokumenter
- PhysRevApplied.18.034042
Forlagets udgivne version, 5,11 MB, PDF-dokument
We present a gate-voltage-tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high-resistivity silicon substrate using III-V buffer layers. We show that low-loss superconducting resonators with an internal quality of 2 x 10(5) can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, T-1 asymptotic to 700 ns, and dephasing times, T-2* asymptotic to 20 ns and T-2,T-echo asymptotic to 1.3 mu s. Further, we infer a high junction transparency of 0.4-0.9 from an analysis of the qubit anharmonicity.
Originalsprog | Engelsk |
---|---|
Artikelnummer | 034042 |
Tidsskrift | Physical Review Applied |
Vol/bind | 18 |
Udgave nummer | 3 |
Antal sider | 12 |
ISSN | 2331-7019 |
DOI | |
Status | Udgivet - 16 sep. 2022 |
Links
- https://arxiv.org/pdf/2202.10860.pdf
Indsendt manuskript
ID: 322557636