Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires
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Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires. / Khan, Sabbir A.; Martí-Sánchez, Sara; Olsteins, Dags; Lampadaris, Charalampos; Carrad, Damon James; Liu, Yu; Quiñones, Judith; Chiara Spadaro, Maria; Sand Jespersen, Thomas; Krogstrup, Peter; Arbiol, Jordi.
In: ACS Nano, Vol. 17, No. 12, 27.06.2023, p. 11794-11804.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires
AU - Khan, Sabbir A.
AU - Martí-Sánchez, Sara
AU - Olsteins, Dags
AU - Lampadaris, Charalampos
AU - Carrad, Damon James
AU - Liu, Yu
AU - Quiñones, Judith
AU - Chiara Spadaro, Maria
AU - Sand Jespersen, Thomas
AU - Krogstrup, Peter
AU - Arbiol, Jordi
N1 - Publisher Copyright: © 2023 The Authors. Published by American Chemical Society.
PY - 2023/6/27
Y1 - 2023/6/27
N2 - Hybrid semiconductor-superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low dimensionality and crystal structure flexibility facilitate unique heterostructure growth and efficient material optimization, crucial prerequisites for accurately constructing complex multicomponent quantum materials. Here, we present an extensive study of Sn growth on InSb, InAsSb, and InAs nanowires and demonstrate how the crystal structure of the nanowires drives the formation of either semimetallic α-Sn or superconducting β-Sn. For InAs nanowires, we observe phase-pure superconducting β-Sn shells. However, for InSb and InAsSb nanowires, an initial epitaxial α-Sn phase evolves into a polycrystalline shell of coexisting α and β phases, where the β/α volume ratio increases with Sn shell thickness. Whether these nanowires exhibit superconductivity or not critically relies on the β-Sn content. Therefore, this work provides key insights into Sn phases on a variety of semiconductors with consequences for the yield of superconducting hybrids suitable for generating topological systems.
AB - Hybrid semiconductor-superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low dimensionality and crystal structure flexibility facilitate unique heterostructure growth and efficient material optimization, crucial prerequisites for accurately constructing complex multicomponent quantum materials. Here, we present an extensive study of Sn growth on InSb, InAsSb, and InAs nanowires and demonstrate how the crystal structure of the nanowires drives the formation of either semimetallic α-Sn or superconducting β-Sn. For InAs nanowires, we observe phase-pure superconducting β-Sn shells. However, for InSb and InAsSb nanowires, an initial epitaxial α-Sn phase evolves into a polycrystalline shell of coexisting α and β phases, where the β/α volume ratio increases with Sn shell thickness. Whether these nanowires exhibit superconductivity or not critically relies on the β-Sn content. Therefore, this work provides key insights into Sn phases on a variety of semiconductors with consequences for the yield of superconducting hybrids suitable for generating topological systems.
KW - epitaxy
KW - interface
KW - nanowires
KW - quantum computing
KW - semiconductor-superconductor hybrid
KW - Sn
KW - topological materials
U2 - 10.1021/acsnano.3c02733
DO - 10.1021/acsnano.3c02733
M3 - Journal article
C2 - 37317984
AN - SCOPUS:85163559469
VL - 17
SP - 11794
EP - 11804
JO - A C S Nano
JF - A C S Nano
SN - 1936-0851
IS - 12
ER -
ID: 360814442