Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
Research output: Contribution to journal › Journal article › Research › peer-review
Original language | English |
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Article number | 142103 |
Journal | Applied Physics Letters |
Volume | 106 |
Issue number | 14 |
Number of pages | 5 |
ISSN | 0003-6951 |
DOIs | |
Publication status | Published - 6 Apr 2015 |
Bibliographical note
[QDev]
Links
- http://arxiv.org/ftp/arxiv/papers/1503/1503.06710.pdf
Submitted manuscript
ID: 154144981