Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
Research output: Contribution to journal › Journal article › Research › peer-review
Standard
Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon. / Hertel, Albert; Eichinger, Michaela; Andersen, Laurits O.; Zanten, David M. T. van; Kallatt, Sangeeth; Scarlino, Pasquale; Kringhoj, Anders; Chavez-Garcia, Jose M.; Gardner, Geoffrey C.; Gronin, Sergei; Manfra, Michael J.; Kjaergaard, Morten; Marcus, Charles M.; Petersson, Karl D.
In: Physical Review Applied, Vol. 18, No. 3, 034042, 16.09.2022.Research output: Contribution to journal › Journal article › Research › peer-review
Harvard
APA
Vancouver
Author
Bibtex
}
RIS
TY - JOUR
T1 - Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
AU - Hertel, Albert
AU - Eichinger, Michaela
AU - Andersen, Laurits O.
AU - Zanten, David M. T. van
AU - Kallatt, Sangeeth
AU - Scarlino, Pasquale
AU - Kringhoj, Anders
AU - Chavez-Garcia, Jose M.
AU - Gardner, Geoffrey C.
AU - Gronin, Sergei
AU - Manfra, Michael J.
AU - Kjaergaard, Morten
AU - Marcus, Charles M.
AU - Petersson, Karl D.
PY - 2022/9/16
Y1 - 2022/9/16
N2 - We present a gate-voltage-tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high-resistivity silicon substrate using III-V buffer layers. We show that low-loss superconducting resonators with an internal quality of 2 x 10(5) can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, T-1 asymptotic to 700 ns, and dephasing times, T-2* asymptotic to 20 ns and T-2,T-echo asymptotic to 1.3 mu s. Further, we infer a high junction transparency of 0.4-0.9 from an analysis of the qubit anharmonicity.
AB - We present a gate-voltage-tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high-resistivity silicon substrate using III-V buffer layers. We show that low-loss superconducting resonators with an internal quality of 2 x 10(5) can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, T-1 asymptotic to 700 ns, and dephasing times, T-2* asymptotic to 20 ns and T-2,T-echo asymptotic to 1.3 mu s. Further, we infer a high junction transparency of 0.4-0.9 from an analysis of the qubit anharmonicity.
U2 - 10.1103/PhysRevApplied.18.034042
DO - 10.1103/PhysRevApplied.18.034042
M3 - Journal article
VL - 18
JO - Physical Review Applied
JF - Physical Review Applied
SN - 2331-7019
IS - 3
M1 - 034042
ER -
ID: 322557636