Anharmonicity of a superconducting qubit with a few-mode Josephson junction
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Anharmonicity of a superconducting qubit with a few-mode Josephson junction. / Kringhøj, Anders; Casparis, Lucas; Hell, Michael; Larsen, Thorvald Wadum; Kuemmeth, Ferdinand; Leijnse, Martin Christian; Flensberg, Karsten; Krogstrup Jeppesen, Peter; Nygård, Jesper; Petersson, Karl David; Marcus, Charles M.
I: Physical Review B, Bind 97, Nr. 6, 060508, 2018.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - Anharmonicity of a superconducting qubit with a few-mode Josephson junction
AU - Kringhøj, Anders
AU - Casparis, Lucas
AU - Hell, Michael
AU - Larsen, Thorvald Wadum
AU - Kuemmeth, Ferdinand
AU - Leijnse, Martin Christian
AU - Flensberg, Karsten
AU - Krogstrup Jeppesen, Peter
AU - Nygård, Jesper
AU - Petersson, Karl David
AU - Marcus, Charles M.
N1 - [Qdev]
PY - 2018
Y1 - 2018
N2 - Coherent operation of gate-voltage-controlled hybrid transmon qubits (gatemons) based on semiconductor nanowires was recently demonstrated. Here we experimentally investigate the anharmonicity in epitaxial InAs-Al Josephson junctions, a key parameter for their use as a qubit. Anharmonicity is found to be reduced by roughly a factor of 2 compared to conventional metallic junctions and dependent on gate voltage. Experimental results are consistent with a theoretical model, indicating that Josephson coupling is mediated by a small number of highly transmitting modes in the semiconductor junction.
AB - Coherent operation of gate-voltage-controlled hybrid transmon qubits (gatemons) based on semiconductor nanowires was recently demonstrated. Here we experimentally investigate the anharmonicity in epitaxial InAs-Al Josephson junctions, a key parameter for their use as a qubit. Anharmonicity is found to be reduced by roughly a factor of 2 compared to conventional metallic junctions and dependent on gate voltage. Experimental results are consistent with a theoretical model, indicating that Josephson coupling is mediated by a small number of highly transmitting modes in the semiconductor junction.
U2 - 10.1103/PhysRevB.97.060508
DO - 10.1103/PhysRevB.97.060508
M3 - Journal article
AN - SCOPUS:85043783972
VL - 97
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 6
M1 - 060508
ER -
ID: 199595142