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Characterization of top-gated Si/SiGe devices for spin qubit applications. / Ansaloni, Fabio; Volk, Christian; Chatterjee, Anasua; Kuemmeth, Ferdinand.
2019 SILICON NANOELECTRONICS WORKSHOP (SNW). Kyoto, Japan : IEEE, 2019. s. 111-112 (IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)).
Publikation: Bidrag til bog/antologi/rapport › Konferencebidrag i proceedings › Forskning › fagfællebedømt
Harvard
Ansaloni, F, Volk, C
, Chatterjee, A & Kuemmeth, F 2019,
Characterization of top-gated Si/SiGe devices for spin qubit applications. i
2019 SILICON NANOELECTRONICS WORKSHOP (SNW). IEEE, Kyoto, Japan, IEEE SILICON NANOELECTRONICS WORKSHOP (SNW), s. 111-112.
https://doi.org/10.23919/SNW.2019.8782944
APA
Ansaloni, F., Volk, C.
, Chatterjee, A., & Kuemmeth, F. (2019).
Characterization of top-gated Si/SiGe devices for spin qubit applications. I
2019 SILICON NANOELECTRONICS WORKSHOP (SNW) (s. 111-112). IEEE. IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
https://doi.org/10.23919/SNW.2019.8782944
Vancouver
Ansaloni F, Volk C
, Chatterjee A, Kuemmeth F.
Characterization of top-gated Si/SiGe devices for spin qubit applications. I 2019 SILICON NANOELECTRONICS WORKSHOP (SNW). Kyoto, Japan: IEEE. 2019. s. 111-112. (IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)).
https://doi.org/10.23919/SNW.2019.8782944
Author
Ansaloni, Fabio ; Volk, Christian ; Chatterjee, Anasua ; Kuemmeth, Ferdinand. / Characterization of top-gated Si/SiGe devices for spin qubit applications. 2019 SILICON NANOELECTRONICS WORKSHOP (SNW). Kyoto, Japan : IEEE, 2019. s. 111-112 (IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)).
Bibtex
@inproceedings{b71e75bd2c7e472395aa9aec984cf9a4,
title = "Characterization of top-gated Si/SiGe devices for spin qubit applications",
author = "Fabio Ansaloni and Christian Volk and Anasua Chatterjee and Ferdinand Kuemmeth",
year = "2019",
month = jun,
day = "9",
doi = "10.23919/SNW.2019.8782944",
language = "English",
series = "IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)",
pages = "111--112",
booktitle = "2019 SILICON NANOELECTRONICS WORKSHOP (SNW)",
publisher = "IEEE",
}
RIS
TY - GEN
T1 - Characterization of top-gated Si/SiGe devices for spin qubit applications
AU - Ansaloni, Fabio
AU - Volk, Christian
AU - Chatterjee, Anasua
AU - Kuemmeth, Ferdinand
PY - 2019/6/9
Y1 - 2019/6/9
U2 - 10.23919/SNW.2019.8782944
DO - 10.23919/SNW.2019.8782944
M3 - Article in proceedings
T3 - IEEE SILICON NANOELECTRONICS WORKSHOP (SNW)
SP - 111
EP - 112
BT - 2019 SILICON NANOELECTRONICS WORKSHOP (SNW)
PB - IEEE
CY - Kyoto, Japan
ER -