Controlled dc Monitoring of a Superconducting Qubit
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Controlled dc Monitoring of a Superconducting Qubit. / Kringhoj, A.; Larsen, T. W.; van Heck, B.; Sabonis, D.; Erlandsson, O.; Petkovic, Ivana; Pikulin, D.; Krogstrup, P.; Petersson, K. D.; Marcus, C. M.
I: Physical Review Letters, Bind 124, Nr. 5, 056801, 05.02.2020.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - Controlled dc Monitoring of a Superconducting Qubit
AU - Kringhoj, A.
AU - Larsen, T. W.
AU - van Heck, B.
AU - Sabonis, D.
AU - Erlandsson, O.
AU - Petkovic, Ivana
AU - Pikulin, D.
AU - Krogstrup, P.
AU - Petersson, K. D.
AU - Marcus, C. M.
PY - 2020/2/5
Y1 - 2020/2/5
N2 - Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by operating a semiconductor region of the device as a field-effect transistor. Here, we exploit this feature to compare in the same device characteristics of the qubit, such as frequency and relaxation time, with related transport properties such as critical supercurrent and normal-state resistance. Gradually opening the field-effect transistor to the monitoring circuit allows the influence of weak-to-strong dc monitoring of a "live" qubit to be measured. A model of this influence yields excellent agreement with experiment, demonstrating a relaxation rate mediated by a gate-controlled environmental coupling.
AB - Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by operating a semiconductor region of the device as a field-effect transistor. Here, we exploit this feature to compare in the same device characteristics of the qubit, such as frequency and relaxation time, with related transport properties such as critical supercurrent and normal-state resistance. Gradually opening the field-effect transistor to the monitoring circuit allows the influence of weak-to-strong dc monitoring of a "live" qubit to be measured. A model of this influence yields excellent agreement with experiment, demonstrating a relaxation rate mediated by a gate-controlled environmental coupling.
KW - GAP
U2 - 10.1103/PhysRevLett.124.056801
DO - 10.1103/PhysRevLett.124.056801
M3 - Journal article
VL - 124
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 5
M1 - 056801
ER -
ID: 248238580