Effect of in-plane alignment on selective area grown homo-epitaxial nanowires
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Effect of in-plane alignment on selective area grown homo-epitaxial nanowires. / Nagda, G.; Beznasyuk, D.; Nygard, J.; Jespersen, T. S.
I: Nanotechnology, Bind 34, Nr. 27, 275702, 02.07.2023.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - Effect of in-plane alignment on selective area grown homo-epitaxial nanowires
AU - Nagda, G.
AU - Beznasyuk, D.
AU - Nygard, J.
AU - Jespersen, T. S.
PY - 2023/7/2
Y1 - 2023/7/2
N2 - In-plane selective area growth (SAG) of III-V nanowires (NWs) has emerged as a scalable materials platform for quantum electronics and photonics applications. Most applications impose strict requirements on the material characteristics which makes optimization of the crystal quality vital. Alignment of in-plane SAG NWs with respect to the substrate symmetry is of importance due to the large substrate-NW interface as well as to obtain nanostructures with well-defined facets. Understanding the role of mis-orientation is thus important for designing devices and interpretation of electrical performance of devices. Here we study the effect of mis-orientation on morphology of selectively grown NWs oriented along the [1 (1) over bar (1) over bar] direction on GaAs(2 1 1) B. Atomic force microscopy is performed to extract facet roughness as a measure of structural quality. Further, we evaluate the dependence of material incorporation in NWs on the orientation and present the facet evolution in between two high symmetry in-plane orientations. By investigating the length dependence of NW morphology, we find that the morphology of approximate to 1 mu m long nominally aligned NWs remains unaffected by the unintentional misalignment associated with the processing and alignment of the sample under study. Finally, we show that using Sb as a surfactant during growth improves root-mean-square facet roughness for large misalignment but does not lower it for nominally aligned NWs.
AB - In-plane selective area growth (SAG) of III-V nanowires (NWs) has emerged as a scalable materials platform for quantum electronics and photonics applications. Most applications impose strict requirements on the material characteristics which makes optimization of the crystal quality vital. Alignment of in-plane SAG NWs with respect to the substrate symmetry is of importance due to the large substrate-NW interface as well as to obtain nanostructures with well-defined facets. Understanding the role of mis-orientation is thus important for designing devices and interpretation of electrical performance of devices. Here we study the effect of mis-orientation on morphology of selectively grown NWs oriented along the [1 (1) over bar (1) over bar] direction on GaAs(2 1 1) B. Atomic force microscopy is performed to extract facet roughness as a measure of structural quality. Further, we evaluate the dependence of material incorporation in NWs on the orientation and present the facet evolution in between two high symmetry in-plane orientations. By investigating the length dependence of NW morphology, we find that the morphology of approximate to 1 mu m long nominally aligned NWs remains unaffected by the unintentional misalignment associated with the processing and alignment of the sample under study. Finally, we show that using Sb as a surfactant during growth improves root-mean-square facet roughness for large misalignment but does not lower it for nominally aligned NWs.
KW - selective area growth
KW - GaAs nanowires
KW - molecular beam epitaxy
KW - semiconductor nanowires
KW - AFM characterization
KW - in-plane orientation
KW - substrate fabrication
KW - MOLECULAR-BEAM EPITAXY
U2 - 10.1088/1361-6528/acca27
DO - 10.1088/1361-6528/acca27
M3 - Journal article
C2 - 37015220
VL - 34
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 27
M1 - 275702
ER -
ID: 347469242