Low temperature transport in p-doped InAs nanowires
Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Standard
Low temperature transport in p-doped InAs nanowires. / Upadhyay, Shivendra; Jespersen, Thomas Sand; Madsen, Morten Hannibal; Krogstrup, Peter; Nygård, Jesper.
I: Applied Physics Letters, Bind 103, Nr. 16, 162104, 01.10.2013.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
Harvard
APA
Vancouver
Author
Bibtex
}
RIS
TY - JOUR
T1 - Low temperature transport in p-doped InAs nanowires
AU - Upadhyay, Shivendra
AU - Jespersen, Thomas Sand
AU - Madsen, Morten Hannibal
AU - Krogstrup, Peter
AU - Nygård, Jesper
PY - 2013/10/1
Y1 - 2013/10/1
N2 - We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.
AB - We present low temperature electrical measurements of p-type Indium Arsenide nanowires grown via molecular beam epitaxy using Beryllium as a dopant. Growth of p-type wires without stacking faults is demonstrated. Devices in field-effect geometries exhibit ambipolar behavior, and the temperature dependence of electron and hole field effect mobilities are extracted. At low temperatures, we observe reproducible conductance fluctuations as a result of quantum interference, and magnetoconductance data show weak antilocalization.
U2 - 10.1063/1.4825275
DO - 10.1063/1.4825275
M3 - Journal article
VL - 103
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 16
M1 - 162104
ER -
ID: 92233444