Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor
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Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor. / MacLeod, S. J.; See, A. M.; Keane, Z. K.; Scriven, P.; Micolich, A. P.; Aagesen, M.; Lindelof, P. E.; Hamilton, A. R.
I: Applied Physics Letters, Bind 104, Nr. 1, 012114, 06.01.2014.Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning › fagfællebedømt
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TY - JOUR
T1 - Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor
AU - MacLeod, S. J.
AU - See, A. M.
AU - Keane, Z. K.
AU - Scriven, P.
AU - Micolich, A. P.
AU - Aagesen, M.
AU - Lindelof, P. E.
AU - Hamilton, A. R.
PY - 2014/1/6
Y1 - 2014/1/6
N2 - Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.
AB - Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.
U2 - 10.1063/1.4858958
DO - 10.1063/1.4858958
M3 - Journal article
VL - 104
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 1
M1 - 012114
ER -
ID: 140164950