Synthesis of GaN Nanocrystals by Sequential Ion Implantation

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Standard

Synthesis of GaN Nanocrystals by Sequential Ion Implantation. / Wolk, J. A.; Yu, K.M.; Bourret-Courchesne, E.D.; Johnson, E.

I: Appl.Phys.Lett., Nr. 70, 1997, s. 2268-2270.

Publikation: Bidrag til tidsskrift › Tidsskriftartikel › Forskning

Harvard

Wolk, JA, Yu, KM, Bourret-Courchesne, ED & Johnson, E 1997, 'Synthesis of GaN Nanocrystals by Sequential Ion Implantation', Appl.Phys.Lett., nr. 70, s. 2268-2270.

APA

Wolk, J. A., Yu, K. M., Bourret-Courchesne, E. D., & Johnson, E. (1997). Synthesis of GaN Nanocrystals by Sequential Ion Implantation. Appl.Phys.Lett., (70), 2268-2270.

Vancouver

Wolk JA, Yu KM, Bourret-Courchesne ED, Johnson E. Synthesis of GaN Nanocrystals by Sequential Ion Implantation. Appl.Phys.Lett. 1997;(70):2268-2270.

Author

Wolk, J. A. ; Yu, K.M. ; Bourret-Courchesne, E.D. ; Johnson, E. / Synthesis of GaN Nanocrystals by Sequential Ion Implantation. I: Appl.Phys.Lett. 1997 ; Nr. 70. s. 2268-2270.

Bibtex

@article{9ead561074c911dbbee902004c4f4f50,
title = "Synthesis of GaN Nanocrystals by Sequential Ion Implantation",
author = "Wolk, {J. A.} and K.M. Yu and E.D. Bourret-Courchesne and E. Johnson",
note = "OEL",
year = "1997",
language = "English",
pages = "2268--2270",
journal = "Appl.Phys.Lett.",
number = "70",

}

RIS

TY - JOUR

T1 - Synthesis of GaN Nanocrystals by Sequential Ion Implantation

AU - Wolk, J. A.

AU - Yu, K.M.

AU - Bourret-Courchesne, E.D.

AU - Johnson, E.

N1 - OEL

PY - 1997

Y1 - 1997

M3 - Journal article

SP - 2268

EP - 2270

JO - Appl.Phys.Lett.

JF - Appl.Phys.Lett.

IS - 70

ER -

ID: 201925