Tuning the response of non-allowed Raman modes in GaAs nanowires

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningfagfællebedømt

Standard

Tuning the response of non-allowed Raman modes in GaAs nanowires. / Amaduzzi, Francesca; Alarcon-Llado, Esther; Hautmann, Hubert; Tanta, Rawa; Matteini, Federico; Tütüncüoǧlu, Gözde; Vosch, Tom André Jos; Nygård, Jesper; Jespersen, Thomas Sand; Uccelli, Emanuele; Fontcuberta i Morral, Anna.

I: Journal of Physics D: Applied Physics, Bind 49, Nr. 9, 095103, 2016.

Publikation: Bidrag til tidsskriftTidsskriftartikelForskningfagfællebedømt

Harvard

Amaduzzi, F, Alarcon-Llado, E, Hautmann, H, Tanta, R, Matteini, F, Tütüncüoǧlu, G, Vosch, TAJ, Nygård, J, Jespersen, TS, Uccelli, E & Fontcuberta i Morral, A 2016, 'Tuning the response of non-allowed Raman modes in GaAs nanowires', Journal of Physics D: Applied Physics, bind 49, nr. 9, 095103. https://doi.org/10.1088/0022-3727/49/9/095103

APA

Amaduzzi, F., Alarcon-Llado, E., Hautmann, H., Tanta, R., Matteini, F., Tütüncüoǧlu, G., Vosch, T. A. J., Nygård, J., Jespersen, T. S., Uccelli, E., & Fontcuberta i Morral, A. (2016). Tuning the response of non-allowed Raman modes in GaAs nanowires. Journal of Physics D: Applied Physics, 49(9), [095103]. https://doi.org/10.1088/0022-3727/49/9/095103

Vancouver

Amaduzzi F, Alarcon-Llado E, Hautmann H, Tanta R, Matteini F, Tütüncüoǧlu G o.a. Tuning the response of non-allowed Raman modes in GaAs nanowires. Journal of Physics D: Applied Physics. 2016;49(9). 095103. https://doi.org/10.1088/0022-3727/49/9/095103

Author

Amaduzzi, Francesca ; Alarcon-Llado, Esther ; Hautmann, Hubert ; Tanta, Rawa ; Matteini, Federico ; Tütüncüoǧlu, Gözde ; Vosch, Tom André Jos ; Nygård, Jesper ; Jespersen, Thomas Sand ; Uccelli, Emanuele ; Fontcuberta i Morral, Anna. / Tuning the response of non-allowed Raman modes in GaAs nanowires. I: Journal of Physics D: Applied Physics. 2016 ; Bind 49, Nr. 9.

Bibtex

@article{2d06e591cec44ecc9629df5385fc5c8a,
title = "Tuning the response of non-allowed Raman modes in GaAs nanowires",
keywords = "semiconductor nanowire, phonon-plasmon interacton, Raman spectroscopy, GaAs, doping, photonic resonances",
author = "Francesca Amaduzzi and Esther Alarcon-Llado and Hubert Hautmann and Rawa Tanta and Federico Matteini and G{\"o}zde T{\"u}t{\"u}nc{\"u}oǧlu and Vosch, {Tom Andr{\'e} Jos} and Jesper Nyg{\aa}rd and Jespersen, {Thomas Sand} and Emanuele Uccelli and {Fontcuberta i Morral}, Anna",
note = "[Qdev]",
year = "2016",
doi = "10.1088/0022-3727/49/9/095103",
language = "English",
volume = "49",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "Institute of Physics Publishing Ltd",
number = "9",

}

RIS

TY - JOUR

T1 - Tuning the response of non-allowed Raman modes in GaAs nanowires

AU - Amaduzzi, Francesca

AU - Alarcon-Llado, Esther

AU - Hautmann, Hubert

AU - Tanta, Rawa

AU - Matteini, Federico

AU - Tütüncüoǧlu, Gözde

AU - Vosch, Tom André Jos

AU - Nygård, Jesper

AU - Jespersen, Thomas Sand

AU - Uccelli, Emanuele

AU - Fontcuberta i Morral, Anna

N1 - [Qdev]

PY - 2016

Y1 - 2016

KW - semiconductor nanowire

KW - phonon-plasmon interacton

KW - Raman spectroscopy

KW - GaAs

KW - doping

KW - photonic resonances

U2 - 10.1088/0022-3727/49/9/095103

DO - 10.1088/0022-3727/49/9/095103

M3 - Journal article

VL - 49

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 9

M1 - 095103

ER -

ID: 164133803