Achieving short high-quality gate-all-around structures for horizontal nanowire field-effect transistors
Research output: Contribution to journal › Journal article › Research › peer-review
Original language | English |
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Article number | 064001 |
Journal | Nanotechnology |
Volume | 30 |
Issue number | 6 |
Number of pages | 8 |
ISSN | 0957-4484 |
DOIs | |
Publication status | Published - 8 Feb 2019 |
Bibliographical note
[Qdev]
- nanowire, gate-all-around, GAA, field-effect transistor, nanowire alignment
Research areas
Links
- https://arxiv.org/pdf/1810.03359
Submitted manuscript
ID: 216157829