Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions
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Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions. / Bolotin, Kirill; Kuemmeth, Ferdinand; Ralph, D.
In: Physical Review Letters, Vol. 97, No. 12, 01.01.2006, p. 127202.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - Anisotropic Magnetoresistance and Anisotropic Tunneling Magnetoresistance due to Quantum Interference in Ferromagnetic Metal Break Junctions
AU - Bolotin, Kirill
AU - Kuemmeth, Ferdinand
AU - Ralph, D
PY - 2006/1/1
Y1 - 2006/1/1
N2 - We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.
AB - We measure the low-temperature resistance of permalloy break junctions as a function of contact size and the magnetic field angle in applied fields large enough to saturate the magnetization. For both nanometer-scale metallic contacts and tunneling devices we observe large changes in resistance with the angle, as large as 25% in the tunneling regime. The pattern of magnetoresistance is sensitive to changes in bias on a scale of a few mV. We interpret the effect as a consequence of conductance fluctuations due to quantum interference.
U2 - 10.1103/PhysRevLett.97.127202
DO - 10.1103/PhysRevLett.97.127202
M3 - Journal article
C2 - 17025993
VL - 97
SP - 127202
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 12
ER -
ID: 44225527