Characterization of top-gated Si/SiGe devices for spin qubit applications
Research output: Chapter in Book/Report/Conference proceeding › Article in proceedings › Research › peer-review
Original language | English |
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Title of host publication | 2019 SILICON NANOELECTRONICS WORKSHOP (SNW) |
Place of Publication | Kyoto, Japan |
Publisher | IEEE |
Publication date | 9 Jun 2019 |
Pages | 111-112 |
DOIs | |
Publication status | Published - 9 Jun 2019 |
Series | IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) |
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ISSN | 2161-4636 |
ID: 234084719