Effect of in-plane alignment on selective area grown homo-epitaxial nanowires
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- Nagda_2023_Nanotechnology_34_275702
Final published version, 871 KB, PDF document
In-plane selective area growth (SAG) of III-V nanowires (NWs) has emerged as a scalable materials platform for quantum electronics and photonics applications. Most applications impose strict requirements on the material characteristics which makes optimization of the crystal quality vital. Alignment of in-plane SAG NWs with respect to the substrate symmetry is of importance due to the large substrate-NW interface as well as to obtain nanostructures with well-defined facets. Understanding the role of mis-orientation is thus important for designing devices and interpretation of electrical performance of devices. Here we study the effect of mis-orientation on morphology of selectively grown NWs oriented along the [1 (1) over bar (1) over bar] direction on GaAs(2 1 1) B. Atomic force microscopy is performed to extract facet roughness as a measure of structural quality. Further, we evaluate the dependence of material incorporation in NWs on the orientation and present the facet evolution in between two high symmetry in-plane orientations. By investigating the length dependence of NW morphology, we find that the morphology of approximate to 1 mu m long nominally aligned NWs remains unaffected by the unintentional misalignment associated with the processing and alignment of the sample under study. Finally, we show that using Sb as a surfactant during growth improves root-mean-square facet roughness for large misalignment but does not lower it for nominally aligned NWs.
Original language | English |
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Article number | 275702 |
Journal | Nanotechnology |
Volume | 34 |
Issue number | 27 |
Number of pages | 7 |
ISSN | 0957-4484 |
DOIs | |
Publication status | Published - 2 Jul 2023 |
- selective area growth, GaAs nanowires, molecular beam epitaxy, semiconductor nanowires, AFM characterization, in-plane orientation, substrate fabrication, MOLECULAR-BEAM EPITAXY
Research areas
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