Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
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Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon. / Hertel, A.; Andersen, L. O.; van Zanten, D. M. T.; Eichinger, M.; Scarlino, P.; Yadav, S.; Karthik, J.; Gronin, S.; Gardner, G. C.; Manfra, M. J.; Marcus, C. M.; Petersson, K. D.
In: Physical Review Applied, Vol. 16, No. 4, 044015, 12.10.2021.Research output: Contribution to journal › Review › Research › peer-review
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TY - JOUR
T1 - Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
AU - Hertel, A.
AU - Andersen, L. O.
AU - van Zanten, D. M. T.
AU - Eichinger, M.
AU - Scarlino, P.
AU - Yadav, S.
AU - Karthik, J.
AU - Gronin, S.
AU - Gardner, G. C.
AU - Manfra, M. J.
AU - Marcus, C. M.
AU - Petersson, K. D.
PY - 2021/10/12
Y1 - 2021/10/12
N2 - We present a superconductor-semiconductor materials system that is both scalable and monolithically integrated on a silicon substrate. It uses selective-area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high-resistivity silicon substrate. We characterize the electrical properties of this materials system at millikelvin temperatures and observe a high average field-effect mobility of mu 3200 cm2/Vs for the InAs channel and a hard induced superconducting gap. Josephson junctions exhibit a high interface transmission, T 0.75, a gate-voltage-tunable switching current with a product of critical current and normal state resistance, ICRN 83 mu V, and signatures of multiple Andreev reflections. These results pave the way for scalable and high-coherence gate-voltage-tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.
AB - We present a superconductor-semiconductor materials system that is both scalable and monolithically integrated on a silicon substrate. It uses selective-area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high-resistivity silicon substrate. We characterize the electrical properties of this materials system at millikelvin temperatures and observe a high average field-effect mobility of mu 3200 cm2/Vs for the InAs channel and a hard induced superconducting gap. Josephson junctions exhibit a high interface transmission, T 0.75, a gate-voltage-tunable switching current with a product of critical current and normal state resistance, ICRN 83 mu V, and signatures of multiple Andreev reflections. These results pave the way for scalable and high-coherence gate-voltage-tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.
KW - ENERGY-GAP STRUCTURE
KW - QUANTUM
KW - SUPERCURRENT
KW - JOSEPHSON
KW - EPITAXY
U2 - 10.1103/PhysRevApplied.16.044015
DO - 10.1103/PhysRevApplied.16.044015
M3 - Review
VL - 16
JO - Physical Review Applied
JF - Physical Review Applied
SN - 2331-7019
IS - 4
M1 - 044015
ER -
ID: 282470780