Evidence for spin-polarized bound states in semiconductor-superconductor-ferromagnetic-insulator islands
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Evidence for spin-polarized bound states in semiconductor-superconductor-ferromagnetic-insulator islands. / Vaitiekėnas, S.; Souto, R. Seoane; Liu, Y.; Krogstrup, P.; Flensberg, K.; Leijnse, M.; Marcus, C. M.
In: Physical Review B, Vol. 105, No. 4, L041304, 31.01.2022.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - Evidence for spin-polarized bound states in semiconductor-superconductor-ferromagnetic-insulator islands
AU - Vaitiekėnas, S.
AU - Souto, R. Seoane
AU - Liu, Y.
AU - Krogstrup, P.
AU - Flensberg, K.
AU - Leijnse, M.
AU - Marcus, C. M.
N1 - Publisher Copyright: © 2022 American Physical Society.
PY - 2022/1/31
Y1 - 2022/1/31
N2 - We report Coulomb blockade transport studies of semiconducting InAs nanowires grown with epitaxial superconducting Al and ferromagnetic insulator EuS on overlapping facets. Comparing experiment to a theoretical model, we associate cotunneling features in even-odd bias spectra with spin-polarized Andreev levels. Results are consistent with zero-field spin splitting exceeding the induced superconducting gap. Energies of subgap states are tunable on either side of zero via electrostatic gates.
AB - We report Coulomb blockade transport studies of semiconducting InAs nanowires grown with epitaxial superconducting Al and ferromagnetic insulator EuS on overlapping facets. Comparing experiment to a theoretical model, we associate cotunneling features in even-odd bias spectra with spin-polarized Andreev levels. Results are consistent with zero-field spin splitting exceeding the induced superconducting gap. Energies of subgap states are tunable on either side of zero via electrostatic gates.
U2 - 10.1103/PhysRevB.105.L041304
DO - 10.1103/PhysRevB.105.L041304
M3 - Journal article
AN - SCOPUS:85124212007
VL - 105
JO - Physical Review B
JF - Physical Review B
SN - 2469-9950
IS - 4
M1 - L041304
ER -
ID: 307294532