Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum
Research output: Contribution to journal › Journal article › Research › peer-review
Standard
Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum. / Drachmann, A C C; Suominen, H J; Kjærgaard, Morten; Shojaei, B; Palmstrøm, C J; Marcus, C M; Nichele, F.
In: Nano Letters, Vol. 17, No. 2, 08.02.2017, p. 1200-1203.Research output: Contribution to journal › Journal article › Research › peer-review
Harvard
APA
Vancouver
Author
Bibtex
}
RIS
TY - JOUR
T1 - Proximity Effect Transfer from NbTi into a Semiconductor Heterostructure via Epitaxial Aluminum
AU - Drachmann, A C C
AU - Suominen, H J
AU - Kjærgaard, Morten
AU - Shojaei, B
AU - Palmstrøm, C J
AU - Marcus, C M
AU - Nichele, F
N1 - [Qdev]
PY - 2017/2/8
Y1 - 2017/2/8
N2 - We demonstrate the transfer of the superconducting properties of NbTi, a large-gap high-critical-field superconductor, into an InAs heterostructure via a thin intermediate layer of epitaxial Al. Two device geometries, a Josephson junction and a gate-defined quantum point contact, are used to characterize interface transparency and the two-step proximity effect. In the Josephson junction, multiple Andreev reflections reveal near-unity transparency with an induced gap Δ* = 0.50 meV and a critical temperature of 7.8 K. Tunneling spectroscopy yields a hard induced gap in the InAs adjacent to the superconductor of Δ* = 0.43 meV with substructure characteristic of both Al and NbTi.
AB - We demonstrate the transfer of the superconducting properties of NbTi, a large-gap high-critical-field superconductor, into an InAs heterostructure via a thin intermediate layer of epitaxial Al. Two device geometries, a Josephson junction and a gate-defined quantum point contact, are used to characterize interface transparency and the two-step proximity effect. In the Josephson junction, multiple Andreev reflections reveal near-unity transparency with an induced gap Δ* = 0.50 meV and a critical temperature of 7.8 K. Tunneling spectroscopy yields a hard induced gap in the InAs adjacent to the superconductor of Δ* = 0.43 meV with substructure characteristic of both Al and NbTi.
KW - Journal Article
U2 - 10.1021/acs.nanolett.6b04964
DO - 10.1021/acs.nanolett.6b04964
M3 - Journal article
C2 - 28072541
VL - 17
SP - 1200
EP - 1203
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 2
ER -
ID: 180970006