A study of transport suppression in an undoped AlGaAs/GaAs quantum dot single-electron transistor

Research output: Contribution to journalJournal articleResearchpeer-review

We report a study of transport blockade features in a quantum dot single-electron transistor, based on an undoped AlGaAs/GaAs heterostructure. We observe suppression of transport through the ground state of the dot, as well as negative differential conductance at finite source-drain bias. The temperature and magnetic field dependences of these features indicate the couplings between the leads and the quantum dot states are suppressed. We attribute this to two possible mechanisms: spin effects which determine whether a particular charge transition is allowed based on the change in total spin, and the interference effects which arise from coherent tunnelling of electrons in the quantum dot.
Original languageEnglish
Article number505302
JournalJournal of Physics: Condensed Matter
Issue number50
Number of pages5
Publication statusPublished - 18 Dec 2013

ID: 119289842