Anodic oxidation of epitaxial superconductor-semiconductor hybrids

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

Anodic oxidation of epitaxial superconductor-semiconductor hybrids. / Drachmann, Asbjorn C. C.; Diaz, Rosa E.; Thomas, Candice; Suominen, Henri J.; Whiticar, Alexander M.; Fornieri, Antonio; Gronin, Sergei; Wang, Tiantian; Gardner, Geoffrey C.; Hamilton, Alex R.; Nichele, Fabrizio; Manfra, Michael J.; Marcus, Charles M.

In: Physical Review Materials, Vol. 5, No. 1, 013805, 25.01.2021.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Drachmann, ACC, Diaz, RE, Thomas, C, Suominen, HJ, Whiticar, AM, Fornieri, A, Gronin, S, Wang, T, Gardner, GC, Hamilton, AR, Nichele, F, Manfra, MJ & Marcus, CM 2021, 'Anodic oxidation of epitaxial superconductor-semiconductor hybrids', Physical Review Materials, vol. 5, no. 1, 013805. https://doi.org/10.1103/PhysRevMaterials.5.013805

APA

Drachmann, A. C. C., Diaz, R. E., Thomas, C., Suominen, H. J., Whiticar, A. M., Fornieri, A., Gronin, S., Wang, T., Gardner, G. C., Hamilton, A. R., Nichele, F., Manfra, M. J., & Marcus, C. M. (2021). Anodic oxidation of epitaxial superconductor-semiconductor hybrids. Physical Review Materials, 5(1), [013805]. https://doi.org/10.1103/PhysRevMaterials.5.013805

Vancouver

Drachmann ACC, Diaz RE, Thomas C, Suominen HJ, Whiticar AM, Fornieri A et al. Anodic oxidation of epitaxial superconductor-semiconductor hybrids. Physical Review Materials. 2021 Jan 25;5(1). 013805. https://doi.org/10.1103/PhysRevMaterials.5.013805

Author

Drachmann, Asbjorn C. C. ; Diaz, Rosa E. ; Thomas, Candice ; Suominen, Henri J. ; Whiticar, Alexander M. ; Fornieri, Antonio ; Gronin, Sergei ; Wang, Tiantian ; Gardner, Geoffrey C. ; Hamilton, Alex R. ; Nichele, Fabrizio ; Manfra, Michael J. ; Marcus, Charles M. / Anodic oxidation of epitaxial superconductor-semiconductor hybrids. In: Physical Review Materials. 2021 ; Vol. 5, No. 1.

Bibtex

@article{b60391d455374fe49ac5c30cf70e2df3,
title = "Anodic oxidation of epitaxial superconductor-semiconductor hybrids",
abstract = "We demonstrate a new fabrication process for hybrid semiconductor-superconductor heterostructures based on anodic oxidation (AO), allowing controlled thinning of epitaxial Al films. Structural and transport studies of oxidized epitaxial Al films grown on insulating GaAs substrates reveal spatial nonuniformity and enhanced critical temperature and magnetic fields. Oxidation of epitaxial Al on hybrid InAs heterostructures with a conducting quantum well show similarly enhanced superconducting properties transferred to the two-dimensional electron gas (2DEG) by proximity effect, with critical perpendicular magnetic fields up to 3.5 T. An insulating AlOx film that passivates the heterostructure from exposure to air is obtained by complete oxidation of the Al. It simultaneously removes the need to strip Al which damages the underlying semiconductor. AO passivation yielded 2DEG mobilities two times higher than similar devices with Al removed by wet etching. An AO-passivated Hall bar showed quantum Hall features emerging at a transverse field of 2.5 T, below the critical transverse field of thinned films, eventually allowing transparent coupling of quantum Hall effect and superconductivity. AO thinning and passivation are compatible with standard lithographic techniques, giving lateral resolution below",
keywords = "CRITICAL MAGNETIC-FIELD, TRANSITION, TEMPERATURE, FILMS",
author = "Drachmann, {Asbjorn C. C.} and Diaz, {Rosa E.} and Candice Thomas and Suominen, {Henri J.} and Whiticar, {Alexander M.} and Antonio Fornieri and Sergei Gronin and Tiantian Wang and Gardner, {Geoffrey C.} and Hamilton, {Alex R.} and Fabrizio Nichele and Manfra, {Michael J.} and Marcus, {Charles M.}",
year = "2021",
month = jan,
day = "25",
doi = "10.1103/PhysRevMaterials.5.013805",
language = "English",
volume = "5",
journal = "Physical Review Materials",
issn = "2475-9953",
publisher = "American Physical Society",
number = "1",

}

RIS

TY - JOUR

T1 - Anodic oxidation of epitaxial superconductor-semiconductor hybrids

AU - Drachmann, Asbjorn C. C.

AU - Diaz, Rosa E.

AU - Thomas, Candice

AU - Suominen, Henri J.

AU - Whiticar, Alexander M.

AU - Fornieri, Antonio

AU - Gronin, Sergei

AU - Wang, Tiantian

AU - Gardner, Geoffrey C.

AU - Hamilton, Alex R.

AU - Nichele, Fabrizio

AU - Manfra, Michael J.

AU - Marcus, Charles M.

PY - 2021/1/25

Y1 - 2021/1/25

N2 - We demonstrate a new fabrication process for hybrid semiconductor-superconductor heterostructures based on anodic oxidation (AO), allowing controlled thinning of epitaxial Al films. Structural and transport studies of oxidized epitaxial Al films grown on insulating GaAs substrates reveal spatial nonuniformity and enhanced critical temperature and magnetic fields. Oxidation of epitaxial Al on hybrid InAs heterostructures with a conducting quantum well show similarly enhanced superconducting properties transferred to the two-dimensional electron gas (2DEG) by proximity effect, with critical perpendicular magnetic fields up to 3.5 T. An insulating AlOx film that passivates the heterostructure from exposure to air is obtained by complete oxidation of the Al. It simultaneously removes the need to strip Al which damages the underlying semiconductor. AO passivation yielded 2DEG mobilities two times higher than similar devices with Al removed by wet etching. An AO-passivated Hall bar showed quantum Hall features emerging at a transverse field of 2.5 T, below the critical transverse field of thinned films, eventually allowing transparent coupling of quantum Hall effect and superconductivity. AO thinning and passivation are compatible with standard lithographic techniques, giving lateral resolution below

AB - We demonstrate a new fabrication process for hybrid semiconductor-superconductor heterostructures based on anodic oxidation (AO), allowing controlled thinning of epitaxial Al films. Structural and transport studies of oxidized epitaxial Al films grown on insulating GaAs substrates reveal spatial nonuniformity and enhanced critical temperature and magnetic fields. Oxidation of epitaxial Al on hybrid InAs heterostructures with a conducting quantum well show similarly enhanced superconducting properties transferred to the two-dimensional electron gas (2DEG) by proximity effect, with critical perpendicular magnetic fields up to 3.5 T. An insulating AlOx film that passivates the heterostructure from exposure to air is obtained by complete oxidation of the Al. It simultaneously removes the need to strip Al which damages the underlying semiconductor. AO passivation yielded 2DEG mobilities two times higher than similar devices with Al removed by wet etching. An AO-passivated Hall bar showed quantum Hall features emerging at a transverse field of 2.5 T, below the critical transverse field of thinned films, eventually allowing transparent coupling of quantum Hall effect and superconductivity. AO thinning and passivation are compatible with standard lithographic techniques, giving lateral resolution below

KW - CRITICAL MAGNETIC-FIELD

KW - TRANSITION

KW - TEMPERATURE

KW - FILMS

U2 - 10.1103/PhysRevMaterials.5.013805

DO - 10.1103/PhysRevMaterials.5.013805

M3 - Journal article

VL - 5

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 1

M1 - 013805

ER -

ID: 258712678