Controlled dc Monitoring of a Superconducting Qubit

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

Controlled dc Monitoring of a Superconducting Qubit. / Kringhoj, A.; Larsen, T. W.; van Heck, B.; Sabonis, D.; Erlandsson, O.; Petkovic, Ivana; Pikulin, D.; Krogstrup, P.; Petersson, K. D.; Marcus, C. M.

In: Physical Review Letters, Vol. 124, No. 5, 056801, 05.02.2020.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Kringhoj, A, Larsen, TW, van Heck, B, Sabonis, D, Erlandsson, O, Petkovic, I, Pikulin, D, Krogstrup, P, Petersson, KD & Marcus, CM 2020, 'Controlled dc Monitoring of a Superconducting Qubit', Physical Review Letters, vol. 124, no. 5, 056801. https://doi.org/10.1103/PhysRevLett.124.056801

APA

Kringhoj, A., Larsen, T. W., van Heck, B., Sabonis, D., Erlandsson, O., Petkovic, I., Pikulin, D., Krogstrup, P., Petersson, K. D., & Marcus, C. M. (2020). Controlled dc Monitoring of a Superconducting Qubit. Physical Review Letters, 124(5), [056801]. https://doi.org/10.1103/PhysRevLett.124.056801

Vancouver

Kringhoj A, Larsen TW, van Heck B, Sabonis D, Erlandsson O, Petkovic I et al. Controlled dc Monitoring of a Superconducting Qubit. Physical Review Letters. 2020 Feb 5;124(5). 056801. https://doi.org/10.1103/PhysRevLett.124.056801

Author

Kringhoj, A. ; Larsen, T. W. ; van Heck, B. ; Sabonis, D. ; Erlandsson, O. ; Petkovic, Ivana ; Pikulin, D. ; Krogstrup, P. ; Petersson, K. D. ; Marcus, C. M. / Controlled dc Monitoring of a Superconducting Qubit. In: Physical Review Letters. 2020 ; Vol. 124, No. 5.

Bibtex

@article{4d12680c54c846a28dfcb0050a50fce9,

title = "Controlled dc Monitoring of a Superconducting Qubit",

abstract = "Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by operating a semiconductor region of the device as a field-effect transistor. Here, we exploit this feature to compare in the same device characteristics of the qubit, such as frequency and relaxation time, with related transport properties such as critical supercurrent and normal-state resistance. Gradually opening the field-effect transistor to the monitoring circuit allows the influence of weak-to-strong dc monitoring of a {"}live{"} qubit to be measured. A model of this influence yields excellent agreement with experiment, demonstrating a relaxation rate mediated by a gate-controlled environmental coupling.",

keywords = "GAP",

author = "A. Kringhoj and Larsen, {T. W.} and {van Heck}, B. and D. Sabonis and O. Erlandsson and Ivana Petkovic and D. Pikulin and P. Krogstrup and Petersson, {K. D.} and Marcus, {C. M.}",

year = "2020",

month = feb,

day = "5",

doi = "10.1103/PhysRevLett.124.056801",

language = "English",

volume = "124",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "5",

}

RIS

TY - JOUR

T1 - Controlled dc Monitoring of a Superconducting Qubit

AU - Kringhoj, A.

AU - Larsen, T. W.

AU - van Heck, B.

AU - Sabonis, D.

AU - Erlandsson, O.

AU - Petkovic, Ivana

AU - Pikulin, D.

AU - Krogstrup, P.

AU - Petersson, K. D.

AU - Marcus, C. M.

PY - 2020/2/5

Y1 - 2020/2/5

N2 - Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by operating a semiconductor region of the device as a field-effect transistor. Here, we exploit this feature to compare in the same device characteristics of the qubit, such as frequency and relaxation time, with related transport properties such as critical supercurrent and normal-state resistance. Gradually opening the field-effect transistor to the monitoring circuit allows the influence of weak-to-strong dc monitoring of a "live" qubit to be measured. A model of this influence yields excellent agreement with experiment, demonstrating a relaxation rate mediated by a gate-controlled environmental coupling.

AB - Creating a transmon qubit using semiconductor-superconductor hybrid materials not only provides electrostatic control of the qubit frequency, it also allows parts of the circuit to be electrically connected and disconnected in situ by operating a semiconductor region of the device as a field-effect transistor. Here, we exploit this feature to compare in the same device characteristics of the qubit, such as frequency and relaxation time, with related transport properties such as critical supercurrent and normal-state resistance. Gradually opening the field-effect transistor to the monitoring circuit allows the influence of weak-to-strong dc monitoring of a "live" qubit to be measured. A model of this influence yields excellent agreement with experiment, demonstrating a relaxation rate mediated by a gate-controlled environmental coupling.

KW - GAP

U2 - 10.1103/PhysRevLett.124.056801

DO - 10.1103/PhysRevLett.124.056801

M3 - Journal article

VL - 124

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 5

M1 - 056801

ER -

ID: 248238580