Electroabsorption in gated GaAs nanophotonic waveguides
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Electroabsorption in gated GaAs nanophotonic waveguides. / Wang, Ying; Uppu, Ravitej; Zhou, Xiaoyan; Papon, Camille; Scholz, Sven; Wieck, Andreas D.; Ludwig, Arne; Lodahl, Peter; Midolo, Leonardo.
In: Applied Physics Letters, Vol. 118, No. 13, 131106, 29.03.2021.Research output: Contribution to journal › Journal article › Research › peer-review
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TY - JOUR
T1 - Electroabsorption in gated GaAs nanophotonic waveguides
AU - Wang, Ying
AU - Uppu, Ravitej
AU - Zhou, Xiaoyan
AU - Papon, Camille
AU - Scholz, Sven
AU - Wieck, Andreas D.
AU - Ludwig, Arne
AU - Lodahl, Peter
AU - Midolo, Leonardo
N1 - Hy-Q
PY - 2021/3/29
Y1 - 2021/3/29
N2 - We report on the analysis of electroabsorption in thin GaAs/Al0.3Ga0.7As nanophotonic waveguides with an embedded p-i-n junction. By measuring the transmission through waveguides of different lengths, we derive the propagation loss as a function of electric field, wavelength, and temperature. The results are in good agreement with the Franz-Keldysh model of electroabsorption extending over 200meV below the GaAs bandgap, i.e., in the wavelength range of 910-970nm. We find a pronounced residual absorption in forward bias, which we attribute to Fermi-level pinning at the waveguide surface, producing over 20dB/mm loss at room temperature. These results are essential for understanding the origin of loss in nanophotonic devices operating in the emission range of self-assembled InAs semiconductor quantum dots toward the realization of scalable quantum photonic integrated circuits.
AB - We report on the analysis of electroabsorption in thin GaAs/Al0.3Ga0.7As nanophotonic waveguides with an embedded p-i-n junction. By measuring the transmission through waveguides of different lengths, we derive the propagation loss as a function of electric field, wavelength, and temperature. The results are in good agreement with the Franz-Keldysh model of electroabsorption extending over 200meV below the GaAs bandgap, i.e., in the wavelength range of 910-970nm. We find a pronounced residual absorption in forward bias, which we attribute to Fermi-level pinning at the waveguide surface, producing over 20dB/mm loss at room temperature. These results are essential for understanding the origin of loss in nanophotonic devices operating in the emission range of self-assembled InAs semiconductor quantum dots toward the realization of scalable quantum photonic integrated circuits.
U2 - 10.1063/5.0039373
DO - 10.1063/5.0039373
M3 - Journal article
VL - 118
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 13
M1 - 131106
ER -
ID: 260589485