Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate

Research output: Contribution to journalLetterResearchpeer-review

Original languageEnglish
JournalNano Letters
Issue number8
Pages (from-to)5628-5633
Number of pages6
Publication statusPublished - 2019

Bibliographical note

- Marie Skłodowska-Curie Actions
- Nanoscale solid-state spin systems in emerging quantum technologies - Spin-NANO, Grant Agreement Number 676108
- Publication date: “24. July 2019
- Embargo period: 12 months
- Nano Letters 19, 5628−5633 (2019), DOI: 10.1021/acs.nanolett.9b02149
- This work received funding from the European Union (EU)’s Horizon 2020 research and innovation programme H2020-ICT-2015 under grant agreement No 688539


ID: 229853089