Finite-bias conductance anomalies at a singlet-triplet crossing

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Finite-bias conductance anomalies at a singlet-triplet crossing. / Stevanato, Chiara; Leijnse, Martin Christian; Flensberg, Karsten; Paaske, Jens.

In: Physical Review B Condensed Matter, Vol. 86, No. 16, 165427, 16.10.2012.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Stevanato, C, Leijnse, MC, Flensberg, K & Paaske, J 2012, 'Finite-bias conductance anomalies at a singlet-triplet crossing', Physical Review B Condensed Matter, vol. 86, no. 16, 165427. https://doi.org/10.1103/PhysRevB.86.165427

APA

Stevanato, C., Leijnse, M. C., Flensberg, K., & Paaske, J. (2012). Finite-bias conductance anomalies at a singlet-triplet crossing. Physical Review B Condensed Matter, 86(16), [165427]. https://doi.org/10.1103/PhysRevB.86.165427

Vancouver

Stevanato C, Leijnse MC, Flensberg K, Paaske J. Finite-bias conductance anomalies at a singlet-triplet crossing. Physical Review B Condensed Matter. 2012 Oct 16;86(16). 165427. https://doi.org/10.1103/PhysRevB.86.165427

Author

Stevanato, Chiara ; Leijnse, Martin Christian ; Flensberg, Karsten ; Paaske, Jens. / Finite-bias conductance anomalies at a singlet-triplet crossing. In: Physical Review B Condensed Matter. 2012 ; Vol. 86, No. 16.

Bibtex

@article{7432418d864a4efbb9ccfdd4cd95955d,
title = "Finite-bias conductance anomalies at a singlet-triplet crossing",
abstract = "Quantum dots and single-molecule transistors may exhibit level crossings induced by tuning external parameters such as magnetic eld or gate voltage. For Coulomb blockaded devices, this shows up as an inelastic cotunneling threshold in the dierential conductance, which can be tuned to zero at the crossing. Here we show that, in addition, level crossings can give rise to a nearly verticalstep-edge, ridge or even a Fano-like ridge-valley feature in the dierential conductance inside the relevant Coulomb diamond. We study a gate-tunable quasidegeneracy between singlet and triplet ground states, and demonstrate how these dierent shapes may result from a competition between nonequilibrium occupations and weak (spin-orbit) mixing of the states. Our results are shown to be in qualitative agreement with recent transport measurements on a Mn complex [E. A. Osorio et al., Nano Lett 10, 105 (2010)]. The eect remains entirely general and should be observable in a wide range of Coulomb blockaded devices.",
author = "Chiara Stevanato and Leijnse, {Martin Christian} and Karsten Flensberg and Jens Paaske",
note = "[QDev]",
year = "2012",
month = oct,
day = "16",
doi = "10.1103/PhysRevB.86.165427",
language = "English",
volume = "86",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",
number = "16",

}

RIS

TY - JOUR

T1 - Finite-bias conductance anomalies at a singlet-triplet crossing

AU - Stevanato, Chiara

AU - Leijnse, Martin Christian

AU - Flensberg, Karsten

AU - Paaske, Jens

N1 - [QDev]

PY - 2012/10/16

Y1 - 2012/10/16

N2 - Quantum dots and single-molecule transistors may exhibit level crossings induced by tuning external parameters such as magnetic eld or gate voltage. For Coulomb blockaded devices, this shows up as an inelastic cotunneling threshold in the dierential conductance, which can be tuned to zero at the crossing. Here we show that, in addition, level crossings can give rise to a nearly verticalstep-edge, ridge or even a Fano-like ridge-valley feature in the dierential conductance inside the relevant Coulomb diamond. We study a gate-tunable quasidegeneracy between singlet and triplet ground states, and demonstrate how these dierent shapes may result from a competition between nonequilibrium occupations and weak (spin-orbit) mixing of the states. Our results are shown to be in qualitative agreement with recent transport measurements on a Mn complex [E. A. Osorio et al., Nano Lett 10, 105 (2010)]. The eect remains entirely general and should be observable in a wide range of Coulomb blockaded devices.

AB - Quantum dots and single-molecule transistors may exhibit level crossings induced by tuning external parameters such as magnetic eld or gate voltage. For Coulomb blockaded devices, this shows up as an inelastic cotunneling threshold in the dierential conductance, which can be tuned to zero at the crossing. Here we show that, in addition, level crossings can give rise to a nearly verticalstep-edge, ridge or even a Fano-like ridge-valley feature in the dierential conductance inside the relevant Coulomb diamond. We study a gate-tunable quasidegeneracy between singlet and triplet ground states, and demonstrate how these dierent shapes may result from a competition between nonequilibrium occupations and weak (spin-orbit) mixing of the states. Our results are shown to be in qualitative agreement with recent transport measurements on a Mn complex [E. A. Osorio et al., Nano Lett 10, 105 (2010)]. The eect remains entirely general and should be observable in a wide range of Coulomb blockaded devices.

U2 - 10.1103/PhysRevB.86.165427

DO - 10.1103/PhysRevB.86.165427

M3 - Journal article

VL - 86

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

IS - 16

M1 - 165427

ER -

ID: 41029907