Hole spin coherence in a Ge/Si heterostructure nanowire

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Relaxation and dephasing of hole spins are measured in a gate-defined Ge/Si nanowire double quantum dot using a fast pulsed-gate method and dispersive readout. An inhomogeneous dephasing time T2(*)≈ 0.18 μs exceeds corresponding measurements in III-V semiconductors by more than an order of magnitude, as expected for predominately nuclear-spin-free materials. Dephasing is observed to be exponential in time, indicating the presence of a broadband noise source, rather than Gaussian, previously seen in systems with nuclear-spin-dominated dephasing.
Original languageEnglish
JournalNano Letters
Issue number3582
Pages (from-to)3582-3586
Number of pages4
Publication statusPublished - 5 May 2014

Bibliographical note

Preprint available at http://arxiv.org/abs/1403.2093.

ID: 109878587