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Measurement of strain in the InGaN/GaN heterogeneous nanostructures. / Stankevic, Tomas; Mickevicius, S.; Nielsen, Mikkel Schou; Feidenhans'l, Robert Krarup; Kryliouk, Olga; Ciechonski, Rafal; Vescovi, Giuliano; Bi, Z.; Mikkelsen, Anders; Samuelsen, Lars; Gundlach, Carsten.
In:
Journal of Applied Crystallography, Vol. 48, No. Part 2, 12.11.2015, p. 344-349.
Research output: Contribution to journal › Journal article › Research › peer-review
Harvard
Stankevic, T, Mickevicius, S, Nielsen, MS
, Feidenhans'l, RK, Kryliouk, O, Ciechonski, R, Vescovi, G, Bi, Z, Mikkelsen, A, Samuelsen, L & Gundlach, C 2015, '
Measurement of strain in the InGaN/GaN heterogeneous nanostructures',
Journal of Applied Crystallography, vol. 48, no. Part 2, pp. 344-349.
https://doi.org/10.1107/S1600576715000965APA
Stankevic, T., Mickevicius, S., Nielsen, M. S.
, Feidenhans'l, R. K., Kryliouk, O., Ciechonski, R., Vescovi, G., Bi, Z., Mikkelsen, A., Samuelsen, L., & Gundlach, C. (2015).
Measurement of strain in the InGaN/GaN heterogeneous nanostructures.
Journal of Applied Crystallography,
48(Part 2), 344-349.
https://doi.org/10.1107/S1600576715000965Vancouver
Stankevic T, Mickevicius S, Nielsen MS
, Feidenhans'l RK, Kryliouk O, Ciechonski R et al.
Measurement of strain in the InGaN/GaN heterogeneous nanostructures.
Journal of Applied Crystallography. 2015 Nov 12;48(Part 2):344-349.
https://doi.org/10.1107/S1600576715000965Author
Stankevic, Tomas ; Mickevicius, S. ; Nielsen, Mikkel Schou ; Feidenhans'l, Robert Krarup ; Kryliouk, Olga ; Ciechonski, Rafal ; Vescovi, Giuliano ; Bi, Z. ; Mikkelsen, Anders ; Samuelsen, Lars ; Gundlach, Carsten. / Measurement of strain in the InGaN/GaN heterogeneous nanostructures. In: Journal of Applied Crystallography. 2015 ; Vol. 48, No. Part 2. pp. 344-349.
Bibtex
@article{f75d97d74852425b8f9dc1ac3afb4460,
title = "Measurement of strain in the InGaN/GaN heterogeneous nanostructures",
author = "Tomas Stankevic and S. Mickevicius and Nielsen, {Mikkel Schou} and Feidenhans'l, {Robert Krarup} and Olga Kryliouk and Rafal Ciechonski and Giuliano Vescovi and Z. Bi and Anders Mikkelsen and Lars Samuelsen and Carsten Gundlach",
year = "2015",
month = nov,
day = "12",
doi = "10.1107/S1600576715000965",
language = "English",
volume = "48",
pages = "344--349",
journal = "Journal of Applied Crystallography",
issn = "0021-8898",
publisher = "Wiley-Blackwell",
number = "Part 2",
}
RIS
TY - JOUR
T1 - Measurement of strain in the InGaN/GaN heterogeneous nanostructures
AU - Stankevic, Tomas
AU - Mickevicius, S.
AU - Nielsen, Mikkel Schou
AU - Feidenhans'l, Robert Krarup
AU - Kryliouk, Olga
AU - Ciechonski, Rafal
AU - Vescovi, Giuliano
AU - Bi, Z.
AU - Mikkelsen, Anders
AU - Samuelsen, Lars
AU - Gundlach, Carsten
PY - 2015/11/12
Y1 - 2015/11/12
U2 - 10.1107/S1600576715000965
DO - 10.1107/S1600576715000965
M3 - Journal article
VL - 48
SP - 344
EP - 349
JO - Journal of Applied Crystallography
JF - Journal of Applied Crystallography
SN - 0021-8898
IS - Part 2
ER -
