Multiterminal Quantized Conductance in InSb Nanocrosses

Research output: Contribution to journalJournal articlepeer-review

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Multiterminal Quantized Conductance in InSb Nanocrosses. / Khan, Sabbir A.; Stampfer, Lukas; Mutas, Timo; Kang, Jung-Hyun; Krogstrup, Peter; Jespersen, Thomas S.

In: Advanced Materials, Vol. 33, No. 29, 2100078, 02.06.2021.

Research output: Contribution to journalJournal articlepeer-review

Harvard

Khan, SA, Stampfer, L, Mutas, T, Kang, J-H, Krogstrup, P & Jespersen, TS 2021, 'Multiterminal Quantized Conductance in InSb Nanocrosses', Advanced Materials, vol. 33, no. 29, 2100078. https://doi.org/10.1002/adma.202100078

APA

Khan, S. A., Stampfer, L., Mutas, T., Kang, J-H., Krogstrup, P., & Jespersen, T. S. (2021). Multiterminal Quantized Conductance in InSb Nanocrosses. Advanced Materials, 33(29), [2100078]. https://doi.org/10.1002/adma.202100078

Vancouver

Khan SA, Stampfer L, Mutas T, Kang J-H, Krogstrup P, Jespersen TS. Multiterminal Quantized Conductance in InSb Nanocrosses. Advanced Materials. 2021 Jun 2;33(29). 2100078. https://doi.org/10.1002/adma.202100078

Author

Khan, Sabbir A. ; Stampfer, Lukas ; Mutas, Timo ; Kang, Jung-Hyun ; Krogstrup, Peter ; Jespersen, Thomas S. / Multiterminal Quantized Conductance in InSb Nanocrosses. In: Advanced Materials. 2021 ; Vol. 33, No. 29.

Bibtex

@article{c6d16cc032b74873b31b41798d93f5e7,
title = "Multiterminal Quantized Conductance in InSb Nanocrosses",
abstract = "By studying the time-dependent axial and radial growth of InSb nanowires (NWs), the conditions for the synthesis of single-crystalline InSb nanocrosses (NCs) by molecular beam epitaxy are mapped. Low-temperature electrical measurements of InSb NC devices with local gate control on individual terminals exhibit quantized conductance and are used to probe the spatial distribution of the conducting channels. Tuning to a situation where the NC junction is connected by few-channel quantum point contacts in the connecting NW terminals, it is shown that transport through the junction is ballistic except close to pinch-off. Combined with a new concept for shadow-epitaxy of patterned superconductors on NCs, the structures reported here show promise for the realization of non-trivial topological states in multi-terminal Josephson junctions.",
keywords = "multi&#8208, terminal quantum devices, nanocrosses, nanowires, quantized conductance, semiconductor, superconductor epitaxy, INAS, TRANSPORT, NANOWIRES, JUNCTIONS, EPITAXY",
author = "Khan, {Sabbir A.} and Lukas Stampfer and Timo Mutas and Jung-Hyun Kang and Peter Krogstrup and Jespersen, {Thomas S.}",
year = "2021",
month = jun,
day = "2",
doi = "10.1002/adma.202100078",
language = "English",
volume = "33",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley - V C H Verlag GmbH & Co. KGaA",
number = "29",

}

RIS

TY - JOUR

T1 - Multiterminal Quantized Conductance in InSb Nanocrosses

AU - Khan, Sabbir A.

AU - Stampfer, Lukas

AU - Mutas, Timo

AU - Kang, Jung-Hyun

AU - Krogstrup, Peter

AU - Jespersen, Thomas S.

PY - 2021/6/2

Y1 - 2021/6/2

N2 - By studying the time-dependent axial and radial growth of InSb nanowires (NWs), the conditions for the synthesis of single-crystalline InSb nanocrosses (NCs) by molecular beam epitaxy are mapped. Low-temperature electrical measurements of InSb NC devices with local gate control on individual terminals exhibit quantized conductance and are used to probe the spatial distribution of the conducting channels. Tuning to a situation where the NC junction is connected by few-channel quantum point contacts in the connecting NW terminals, it is shown that transport through the junction is ballistic except close to pinch-off. Combined with a new concept for shadow-epitaxy of patterned superconductors on NCs, the structures reported here show promise for the realization of non-trivial topological states in multi-terminal Josephson junctions.

AB - By studying the time-dependent axial and radial growth of InSb nanowires (NWs), the conditions for the synthesis of single-crystalline InSb nanocrosses (NCs) by molecular beam epitaxy are mapped. Low-temperature electrical measurements of InSb NC devices with local gate control on individual terminals exhibit quantized conductance and are used to probe the spatial distribution of the conducting channels. Tuning to a situation where the NC junction is connected by few-channel quantum point contacts in the connecting NW terminals, it is shown that transport through the junction is ballistic except close to pinch-off. Combined with a new concept for shadow-epitaxy of patterned superconductors on NCs, the structures reported here show promise for the realization of non-trivial topological states in multi-terminal Josephson junctions.

KW - multi&#8208

KW - terminal quantum devices

KW - nanocrosses

KW - nanowires

KW - quantized conductance

KW - semiconductor

KW - superconductor epitaxy

KW - INAS

KW - TRANSPORT

KW - NANOWIRES

KW - JUNCTIONS

KW - EPITAXY

U2 - 10.1002/adma.202100078

DO - 10.1002/adma.202100078

M3 - Journal article

C2 - 34075631

VL - 33

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 29

M1 - 2100078

ER -

ID: 271685397