On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

Research output: Contribution to journal › Journal article › Research › peer-review

Standard

On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers. / Shojaei, B.; Drachmann, A. C. C.; Pendharkar, M.; Pennachio, D. J.; Echlin, M. P.; Callahan, P. G.; Kraemer, S.; Pollock, T. M.; Marcus, C. M.; Palmstrøm, C. J.

In: Physical Review B (Condensed Matter and Materials Physics), 12.10.2016.

Research output: Contribution to journal › Journal article › Research › peer-review

Harvard

Shojaei, B, Drachmann, ACC, Pendharkar, M, Pennachio, DJ, Echlin, MP, Callahan, PG, Kraemer, S, Pollock, TM, Marcus, CM & Palmstrøm, CJ 2016, 'On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers', Physical Review B (Condensed Matter and Materials Physics). https://doi.org/10.1103/PhysRevB.94.245306

APA

Shojaei, B., Drachmann, A. C. C., Pendharkar, M., Pennachio, D. J., Echlin, M. P., Callahan, P. G., Kraemer, S., Pollock, T. M., Marcus, C. M., & Palmstrøm, C. J. (2016). On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers. Physical Review B (Condensed Matter and Materials Physics), [245306]. https://doi.org/10.1103/PhysRevB.94.245306

Vancouver

Shojaei B, Drachmann ACC, Pendharkar M, Pennachio DJ, Echlin MP, Callahan PG et al. On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers. Physical Review B (Condensed Matter and Materials Physics). 2016 Oct 12. 245306. https://doi.org/10.1103/PhysRevB.94.245306

Author

Shojaei, B. ; Drachmann, A. C. C. ; Pendharkar, M. ; Pennachio, D. J. ; Echlin, M. P. ; Callahan, P. G. ; Kraemer, S. ; Pollock, T. M. ; Marcus, C. M. ; Palmstrøm, C. J. / On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers. In: Physical Review B (Condensed Matter and Materials Physics). 2016.

Bibtex

@article{6af43200e96047d1bd53873611a0a39e,
title = "On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers",
abstract = " The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of the possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic sub-band. At low carrier density the functional dependence of the mobility on carrier density provided evidence of coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750,000 cm$^{2}$/Vs was achieved at a sample temperature of 2 K. ",
keywords = "cond-mat.mtrl-sci",
author = "B. Shojaei and Drachmann, {A. C. C.} and M. Pendharkar and Pennachio, {D. J.} and Echlin, {M. P.} and Callahan, {P. G.} and S. Kraemer and Pollock, {T. M.} and Marcus, {C. M.} and Palmstr{\o}m, {C. J.}",
note = "[Qdev]",
year = "2016",
month = oct,
day = "12",
doi = "10.1103/PhysRevB.94.245306",
language = "English",
journal = "Physical Review B",
issn = "2469-9950",
publisher = "American Physical Society",

}

RIS

TY - JOUR

T1 - On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers

AU - Shojaei, B.

AU - Drachmann, A. C. C.

AU - Pendharkar, M.

AU - Pennachio, D. J.

AU - Echlin, M. P.

AU - Callahan, P. G.

AU - Kraemer, S.

AU - Pollock, T. M.

AU - Marcus, C. M.

AU - Palmstrøm, C. J.

N1 - [Qdev]

PY - 2016/10/12

Y1 - 2016/10/12

N2 - The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of the possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic sub-band. At low carrier density the functional dependence of the mobility on carrier density provided evidence of coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750,000 cm$^{2}$/Vs was achieved at a sample temperature of 2 K.

AB - The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of the possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic sub-band. At low carrier density the functional dependence of the mobility on carrier density provided evidence of coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750,000 cm$^{2}$/Vs was achieved at a sample temperature of 2 K.

KW - cond-mat.mtrl-sci

U2 - 10.1103/PhysRevB.94.245306

DO - 10.1103/PhysRevB.94.245306

M3 - Journal article

JO - Physical Review B

JF - Physical Review B

SN - 2469-9950

M1 - 245306

ER -

ID: 229314756