Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

Research output: Contribution to journalJournal articleResearchpeer-review

  • S. J. MacLeod
  • A. M. See
  • Z. K. Keane
  • P. Scriven
  • A. P. Micolich
  • M. Aagesen
  • Lindelof, Poul Erik
  • A. R. Hamilton
Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.
Original languageEnglish
Article number012114
JournalApplied Physics Letters
Issue number1
Number of pages3
Publication statusPublished - 6 Jan 2014

ID: 140164950